Non-vacuum manufacturing method of CIGS and/or CIGSS (copper-indium-gallium-selenium and/or sulphur) solar cell

Abstract

The invention relates to a manufacturing method of a CIGS and / or CIGSS (copper-indium-gallium-selenium and / or sulphur) solar cell, in particular to a non-vacuum manufacturing method of the CIGS and / or CIGSS solar cell. The method comprises the following steps of: (1) mixing two / three / four parts of powders containing IB, IIIA and VIA groups of elements according to the proportion of formula so as to form a raw mixed powder containing CIGS and / or CIGSS; (2) adding additive VIA group of element powder to the raw mixed powder and mixing to form the finally mixed powder; (3) adding a solvent to the finally mixed powder and stirring to form slurry; (4) coating the slurry on a molybdenum metal layer under a non-vacuum condition and softly baking to form a prefabricating layer; (5) rapidly heating, annealing and crystallizing to form a light absorbing layer; (6) depositing cadmium sulfide or zinc sulfide on the light absorbing layer; and (7) finally depositing ZnO and AZO again to obtain the CIGS and / or CIGSS solar cell. The invention avoids using dangerous hydrogen selenide and has low cost.

Description

technical field [0001] The invention relates to a manufacturing method of copper indium gallium selenide and / or sulfur solar cell, in particular to a non-vacuum manufacturing copper indium gallium selenide and / or sulfur solar cell. Background technique [0002] In recent years, with the rise of international oil prices and the rise of environmental protection awareness, green energy has become the mainstream of new energy. Among them, solar cells are obtained from the stable radiant energy of the sun, and the source will not be exhausted. R&D funds and policy subsidies are used to support the local solar cell industry, making the global solar industry develop very rapidly. [0003] The first generation of solar modules includes monocrystalline silicon and polycrystalline silicon solar modules. Although the photoelectric conversion efficiency is high and the mass production technology is mature, due to the high cost of materials and the lack of supply of silicon wafers due to...

AI Technical Summary

Problems solved by technology

[0009] The shortcoming of above-mentioned prior art is, when the oxygen in oxide is removed, need use hydrogen to reduce this oxide at extremely high temperature, use hydrogen selenide to carry out selenization simultaneously, this process will not only increase equipment cost, and selenium Hydrogen hydride is very toxic, and there is a danger of death if it is used carelessly. At the same time, if there are oxygen molecules remaining in the final CIGS and / or sulfur absorbing layer during the reduction process, it will affect the CIGS and / or The light-absorbing properties of the sulfur-absorbing layer even affect the efficiency

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