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High-brightness GaN-based light emitting diode epitaxial growth method

A technology of light-emitting diodes and epitaxial growth, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing the number of radiation recombination and quantum confinement effects, reducing the luminous intensity, and increasing the volume, and achieves the formation and reduction of inhibition. Compensation effect, effect of improving crystal quality

Active Publication Date: 2014-04-02
宁波安芯美半导体有限公司
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AI Technical Summary

Benefits of technology

This patented technique improves how well an indium galliuminide (In2/nm

Problems solved by technology

Technological Problem: The technical problem addressed by this patented innovative research relates how to enhance the emission characteristics of gallium nitride based LEDs while reducing their impact on their overall properties such as brightness or lifespan.

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for epitaxial growth of high-brightness GaN-based light-emitting diodes includes the following specific steps:

[0031] Step 1: The substrate is subjected to high-temperature cleaning treatment in a hydrogen atmosphere of 1000-1200°C for 5-20 minutes, and then nitriding. The substrate is a material suitable for the growth of GaN-based semiconductor epitaxial materials, such as sapphire, GaN and silicon carbide (SiC ) Single crystal etc.;

[0032] Step 2: Lower the temperature to between 500-650°C, and grow a low-temperature GaN buffer layer with a thickness of 20-30nm, the growth pressure is controlled between 300-760 Torr, and the V / III ratio is 10-1200;

[0033] Step 3: After the growth of the low-temperature GaN buffer layer is completed, stop feeding trimethylgallium (TMGa), and the substrate temperature is increased to between 900-1200°C, and the low-temperature GaN buffer layer is subjected to in-situ thermal annealing treatment , The annealing time is 5-30min,...

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Abstract

The invention provides a high-brightness GaN-based light emitting diode epitaxial growth method. The growth method comprises the following step of dividing into 2 layers, namely a high-temperature P-layer GaN layer (Hp-1) and a high-temperature P-layer GaN layer (Hp-2) for growth in the process of growing a P-layer GaN layer at high temperature. In the high-temperature P-layer GaN, Mg doping adopts uneven growth, and In element doping is contained in the Mg uneven doping growth process, the compensation effect is reduced due to the optimized uneven Mg doping growth method under the low In component condition, the carrier concentration is improved, the formation of P-GaN dislocation is effectively inhibited, the crystal quality is improved, and the service life of a device is improved. Meanwhile, the ionization energy of Mg in the InGaN material is lower than that of the Mg in the GaN, so a higher hole concentration is obtained, the radiation lighting efficiency is improved and the high-brightness light emitting diode can be obtained.

Description

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Claims

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Application Information

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Owner 宁波安芯美半导体有限公司
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