The present invention discloses a quantitative
analysis method for a heavy-
ion single-particle multi-bit upset effect of a device. The method comprises: selecting a type of heavy ions, setting an appropriate
fluence rate according to a corresponding principle to perform
radiation on a cover opening device, recording logic addresses and data of storage units, which perform single-particle upset, of the device by a test
system, and stopping
radiation when reaching an estimated single-particle upset number or the maximum
ion fluence; establishing a mapping relationship from the logic addresses of the device to physical addresses, and according to a physical bit map, carrying out statistics on a number of single-particle upsets, a number of single-particle unit upset events and a number of multi-bit upset events; and by combining
ion fluence, calculating parameters such as probabilities of the single-particle unit upset events and the multi-bit upset events, a multi-bit upset mean, a multi-bit upset cross section and the like. According to the quantitative
analysis method for the heavy-ion single-particle multi-bit upset effect of the device,
technical support and information can be provided for an anti-single-particle-upset reinforcement design of the device, and effectiveness of a reinforcement technology is verified and evaluated.