The invention relates to the technical field of
semiconductor process detection, and discloses a
semiconductor process detection method and
system, and the method comprises the steps: carrying out the pretreatment of a
semiconductor wafer, enabling the surface of the semiconductor
wafer to be free of residual pollutants, and employing a
chemical cleaning and
drying technology to maintain the completeness of a
crystal; the method comprises the following steps: selecting a plurality of isotopes which have the same
chemical property as a measured target element but have obvious
natural abundance difference as
standard samples, and uniformly
doping an
isotope solution with known concentration into the plurality of
standard samples; according to the method, target element
isotope labels with known concentrations are introduced into a sample, then the SIMS is used for detecting the relative
signal intensity of natural isotopes and doped isotopes at the same time, so that internal correction is achieved, the
ionization efficiency difference caused by different matrixes is counteracted, and due to the fact that the chemical behaviors of different isotopes in the same matrix are basically consistent, the
ionization efficiency is greatly improved. The matrix effect can be greatly reduced, so that the accuracy and
repeatability of quantitative analysis are improved.