The invention provides a
plasma processing apparatus comprising a means for detecting the apparatus condition related to the
ion flux quantity of
plasma (
plasma density) and the distribution thereof for to stabilizing
mass production and minimizing apparatus differences. The
plasma processing apparatus comprises a vacuum reactor 108, a
gas supply means 111, a
pressure control means, a plasma source power supply 101, a lower
electrode 113 on which an object to be processes 112 is placed within the vacuum reactor, and a
high frequency bias power supply 117, further comprising a probe
high frequency oscillation means 103 for supplying an oscillation frequency that differs from the plasma source power supply 101 and the
high frequency bias power supply 117 into the
plasma processing chamber, high frequency receivers 114 through 116 for receiving the high frequency supplied from the probe
high frequency oscillation means 603 via a surface coming into contact with plasma, and a high
frequency analysis means 110 for measuring the impedance per oscillation frequency within an electric circuit formed by the probe
high frequency oscillation means 603 and the receivers 114 through 116, the reflectance and the
transmittance, and the variation of
harmonic components.