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Plasma Processing Apparatus and Plasma Processing Method

The invention provides a plasma processing apparatus comprising a means for detecting the apparatus condition related to the ion flux quantity of plasma (plasma density) and the distribution thereof for to stabilizing mass production and minimizing apparatus differences. The plasma processing apparatus comprises a vacuum reactor 108, a gas supply means 111, a pressure control means, a plasma source power supply 101, a lower electrode 113 on which an object to be processes 112 is placed within the vacuum reactor, and a high frequency bias power supply 117, further comprising a probe high frequency oscillation means 103 for supplying an oscillation frequency that differs from the plasma source power supply 101 and the high frequency bias power supply 117 into the plasma processing chamber, high frequency receivers 114 through 116 for receiving the high frequency supplied from the probe high frequency oscillation means 603 via a surface coming into contact with plasma, and a high frequency analysis means 110 for measuring the impedance per oscillation frequency within an electric circuit formed by the probe high frequency oscillation means 603 and the receivers 114 through 116, the reflectance and the transmittance, and the variation of harmonic components.
Owner:HITACHI HIGH-TECH CORP
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