Method for discriminating single-event upset of neutrons of SRAM under pulse neutron irradiation condition

Abstract

The invention relates to a method for discriminating single-event upset of neutrons of SRAM under a pulse neutron irradiation condition. The method comprises the following steps: classifying upset bytes; performing Monte-Carlo simulated calculation on upset digits corresponding to different upset types of bytes; calculating the change curve of different upset types of bytes and the upset digits which the different upset types of bytes contain along with the accumulation of the upset digits; extracting experimental data, performing two-time upset effect correction on the experimental data points according to the curve obtained by simulated calculation to obtain the actual different upset types of bytes, the corresponding upset digits and the actual accumulated total upset digits; and comparing the corrected experimental data points and the data points of the simulated calculation curve and judging whether the pulse neutron irradiation effect accords with the single-event upset accumulation rule or not. By the method, the problem that whether the pulse neutron irradiation effect is caused by single-event upset or not is difficult to determine under the conditions of high-fluence-rate neutrons and lack of intermediate fluence point experiment data is solved.

Description

technical field [0001] The invention relates to a method for discriminating neutron single event reversal of SRAM under the condition of pulsed neutron radiation. Background technique [0002] Microelectronic circuits such as SRAM (Static Random Access Memory) are sensitive to neutron-induced soft errors or hard damage. With the continuous improvement of VLSI manufacturing process, the feature size of the device is reduced, and the neutron energy threshold that can cause single event upset is lowered. In recent years, theoretical and experimental studies on fission neutrons (0.01MeV≤En≤10MeV) have shown that small-scale devices are very sensitive to single-event upsets induced by fission neutrons. However, current research focuses on neutrons produced at low fluence rates under steady-state reactor conditions, with a typical fluence rate of about 10 9 to10 10 n / cm 2 s (1 MeV-eq.). Since single-event inversion has the characteristic of increasing linearly with the accumu...

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Problems solved by technology

[0004] In order to solve the problem that it is difficult to determine whether the pulsed neutron radiation effect is caused by single event flipping under the conditions of high fluence rate neutrons and lack of experimental data at the intermediate fluence point, the present invention proposes a SRAM under the condition of pulsed neutron radiation The neutron single-event flipping screening method can judge whether the flipping caused by pulsed neutron radiation is consistent with the flip accumulation law under steady-state conditions under the condition of lack of experimental data at intermediate fluence points

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