40 results about "Deuterium ions" patented technology

An ion source for the generation of hydrogen or deuterium ions is disclosed, said source suitable for the generation of D-D and D-T neutrons, wherein the body of the ion source is cylindrical, and disposed at one end of the ion source opposite the extraction plate, is a single, spiraled RF coil antenna, in which the spiraled coils are flat.

A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.

The present invention provides a pulsed neutron generator. In a high vacuum and high pressure ceramic tube, when a trigger pulse is added between the source trigger pole and cathode of vacuum arc ion, the deuterium atom is ionized and the initial plasma is diffused, such that the anode and the cathode of the ion source is conducted, the arc current is formed, and the high density plasma is generated. Under the action of accelerating the high pressure, the deuterium ion beam interacts with the tritium titanium target, the deuterium tritium reaction produces, and the pulsed neutron with the energy of 14 MeV is generated. A circular magnetic field is set up at the lead pole of the vacuum arc ion source, which can focus on the formation of the deuterium ion, increase the deuterium ion beam to the target, improve the pulsed neutron yield; The combination of a dry pump, a molecular pump, an ion pump and an air pump is used to improve the vacuum degree of the system, and reduce the loss of deuterium ion beam in the transmission process. The aluminum film with the thickness of 400 nm is coated on the surface of the tritium titanium target, which prevents the heavy ion from reaching the tritium target, and reduces the damage of the target.

The invention discloses a small high-yield and deuterium-deuterium neutron generator. Modular distributed high-frequency ion sources are adopted and evenly distributed on the outer surface of a ceramic cylinder with the spherical end, and deuterium ion beams distributed evenly are output, wherein the flow intensity of the deuterium ion beams is larger than 1 A, and the single atom proportion is larger than 80%; the deuterium ion beams are accelerated in a cylindrical accelerating electric field with the spherical end and bombard a cylindrical metal or ceramic self-forming target to cause a deuterium/deuterium reaction and then generate neutrons of 2.45 MeV, and the self-forming target is located at the high-potential end and provided with the spherical end. The number of the modular distributed high-frequency ion sources and the area of the self-forming target are not limited, the yield of the neutrons of the deuterium/deuterium reaction is larger than 1011 n/s, and no radioactive pollutants are discharged. The neutron generator is suitable for commercialized application such as the fields of boron neutron capture treatment, neutron radiography, on-line material component neutron detection, neutron irradiation modification and californium neutron source substitute products.

This invention combines minor, but not obvious, adaptations of available and, for this field, relatively simple hardware that primarily uses the least power-hungry electrostatic (rather than mainly magnetic) control of accelerated colliding beams of bare deuterium nuclei in three-dimensionally pre-determined collision attitudes that are now found by new research to offer a method (with required apparatus) of fusing directly to helium four with high efficiency release of the greatest possible single-step free energy of fusion in kinetic energy of helium four charged nuclei and with minimized side-effects (if any) of wasted energy and troublesome output products in neutrons, radiation, helium three or tritium nuclei, and plasma electrons. This invention can be combined with the most efficient prior art in deuterium ion sources, continued fusion processes, output power conversion, and full reactor assembly at any scale from laboratory experiments to industrial power networks.

A semiconductor device may be designed in the following manner. A stacked layer of a silicon oxide film and an organic film is provided over a substrate, deuterated water is contained in the organic film, and then a conductive film is formed in contact with the organic film. Next, an inert conductive material that does not easily generate a deuterium ion or a deuterium molecule is selected by measuring the amount of deuterium that exists in the silicon oxide film.

The invention provides a neutron source. A porous ion source is adopted for the neutron source, so as to educe deuterium ions or deuterium and tritium mixed ions with specific shapes and density distribution. Each educing hole is provided with corresponding initial focusing electrode and accelerating electrode; after being completed in acceleration, ion beams pass through an electric quadrupole field, and are focused to be in a required small size in a direction Z, and meanwhile, are defocused and spread to a certain length in a direction Y, so as to form a fan-shaped ion beam. The fan-shaped ion beam bombards a moving target; in the direction Y, an emergent neutron beam equivalent to a small-size focal-spot-shaped neutron source is generated. The neutron source which is provided by the invention is suitably applied to the fields, which have requirements on the directivity and the point source characteristic of a neutron beam, of neutron therapy, photography, explosives detection and the like.

The invention provides a method for forming a semiconductor device, comprising the following steps of: providing a substrate, carrying out first ion implantation on the substrate and forming an ion trap; forming a grid structure on the surface of the substrate; taking the grid structure as a mask, carrying out second ion implantation on the substrate and forming lightly-doped regions comprising lightly-doped source regions and lightly-doped drain regions; forming side walls at the two sides of the grid structure, taking the side walls as masks, carrying out third ion implantation on the substrate and forming heavily-doped regions comprising heavily-doped source regions and heavily-doped drain regions, wherein one or more of a first ion implantation environment, a second ion implantation environment and a third ion implantation environment also comprise one or combination of deuterium ions, fluorine ions or chloride ions. According to the method, the deuterium ions, the fluorine ions or the chloride ions are used for saturating silicon dangling bonds at the interface position between the substrate and the grid structure, so as to restrain the hot electron effect.

A method of reducing hot carrier degradation and a semiconductor structure so formed are disclosed. One embodiment of the method includes depositing a silicon nitride layer over a transistor device, ion implanting a species into the silicon nitride layer to drive hydrogen from the silicon nitride layer, and annealing to diffuse the hydrogen into a channel region of the transistor device. The species may be chosen from, for example: germanium (Ge), arsenic (As), xenon (Xe), nitrogen (N), oxygen (O), carbon (C), boron (B), indium (In), argon (Ar), helium (He), and deuterium (De). The ion implantation modulates atoms in the silicon nitride layer such as hydrogen, nitrogen and hydrogen-nitrogen bonds such that hydrogen can be controllably diffused into the channel region.

The invention relates to a device for generating and accelerating deuterium ions through a microwave ion source and generating high current neutrons through deuterium and deuterium (deuterium and tritium) reactions. A solid body with the quite high hydrogen absorbing ability is installed on the upper face of a subcooling target, deuterium is ionized by the microwave ion source and then accelerated to own quite high energy to be shot on the target, the high-energy ions shot on the target react with the deuterium adsorbed on the target, and the neutrons are generated. Compared with a penning ion source scheme commonly adopted at present, the size of the device is increased slightly, while the intensity of deuterium ion beam is increased by several times to dozens of times, the output of the neutrons is multiplied, in addition, the service life of the microwave ion source is long, and thus the service life of the whole device can be several years.

The invention provides a SOI (Silicon On Insulator) substrate and a preparation method thereof. The method comprises steps: a first substrate is provided, and a first dielectric layer is formed on the first substrate; deuterium ion injection is carried out on the first substrate, and a deuterium doping layer is formed in the first substrate with a first predetermined depth; a second substrate is provided, a second dielectric layer is formed on the second substrate, and the first dielectric layer and the second dielectric layer are bonded; thermal annealing is carried out, and microbubbles are formed in the deuterium doping layer; and the first substrate is cut from the deuterium doping layer, and the SOI substrate is formed. deuterium ions exist in the upper-layer silicon of the SOI substrate; when a gate oxide layer or an interface is formed in a subsequent device, deuterium can be diffused and combined with a dangling bond at the interface, and a stable structure can be formed; the deuterium ions can eliminate defects in the device, and penetration of hot carriers can be avoided; hydrogen annealing to eliminate defects is not needed, the device preparation process is simplified, and the performance and the reliability of the device are improved.

The invention discloses a method for measuring deuterium and tritium depth distribution in a solid matter. Firstly, deuterium ions are used for bombarding the to-be-tested solid matter, then energy spectrums of protons and alpha particles generated in the bombarding process are measured, and then hydrogen isotope distribution information in the solid matter is obtained through a data processing module capable of self-consistent treatment of hydrogen isotope concentration depth distribution and stopping power. The method for measuring deuterium and tritium depth distribution in the solid matterhas the advantages that depth distribution of the two hydrogen isotopes namely deuterium and tritium in the solid matter can be analyzed simultaneously, and the stopping power is self-consistent in the analyzing results and in the analyzing process.

The invention puts forward a nondestructive testing system for neutron chemical warfare agent. The system comprises a deuterium ion emission device, a deuterium target, a target chamber, a tested sample placement area and [Gamma] ray detectors, wherein the deuterium target is arranged in the target chamber, the deuterium ion emission device is arranged on the outer side of the target chamber, faces the deuterium target and can emit deuterium ions to the deuterium target, the deuterium target is irradiated by the deuterium ions to emit a neutron beam, the tested sample placement area is arranged in a neutron beam emergent direction, the [Gamma] ray detectors are arranged around the tested sample placement area for detecting [Gamma] rays emitted from the sample irradiated by the neutron beam.

The invention provides a liquid fuel extraction system. The liquid fuel extraction system is used for extracting liquid fuel comprising deuterium ions from seawater and comprises an extraction device and a seawater storage tank, wherein the extraction device comprises a reverse osmosis membrane device, seawater is guided out from the seawater storage tank via a pipeline, fresh water in the seawater is filtered out by the reverse osmosis membrane device, and seawater concentrated solution comprising the deuterium ions is used as liquid fuel. The invention further provides an extraction process. By means of reverse osmosis technology, fresh water in the seawater can be separated, and seawater concentrate comprising the deuterium ions is extracted and is reversely utilized, so that a brand-new development direction is provided for the field of development and exploitation of seawater and seawater can be converted into liquid fuel.

A method and device for production of helium and recoverable energy is provided. The system directs a first directionalized flow of a of a first streaming population of deuterium ions to an intersection with a second directionalized flow of a second streaming population of deuterium ions opposite the first stream. At or proximate to an intersection of the two streams helium and waste energy are produced and captured.

The invention belongs to the technical field of magnetic-confinement nuclear fusion. Magnetic-confinement nuclear fusion mainly comprises two kinds: one is an international thermonuclear fusion experiment reactor, wherein plasmas are sealed in an annular pipe with a radial gradient in a magnetic field, and ions easily run to a pipe wall; and the other is that plasmas are sealed in a straight fusion pipe with axisymmetric magnetic field distribution, ions cannot run to a pipe wall, and a magnetic plug is adopted, so difficult-to-block ions overflow from two ends. The magnetic plug has to be studied for many years before application. Therefore, the invention provides a magnetic confinement annular return pipe and a straight deuterium tritium (DT) fusion pipe as designed in an attached drawing of the specification. The magnetic confinement annular return pipe and the straight deuterium tritium fusion pipe consist of a straight fusion pipe 10 positioned in a superconducting coil 17, and annular return pipes 7 and 20 with two ends positioned in superconducting coils 5 and 18. Deuterium ions, tritium ions and electrons are respectively injected into the left and right ends. Under the constraint of a magnetic field, ions and electrons flow out from the two ends of the fusion pipe, pass through the annular return pipe and then flow into the fusion pipe again. In the straight fusion pipe, ions with opposite movement directions collide with each other, and hundreds of thousands of watts of deuterium-tritium fusion power is generated per cubic centimeter. The magnetic confinement annular return pipe and the straight deuterium tritium fusion pipe can be applied in several years.

Method and apparatus for evaluating an earth formation using at least one detector with a pulsed neutron source that includes a beam of deuterium ions that can be directed to a selected position on a target including tritium that extends axially along a sealed tube. This makes it possible to generate pulsed neutrons from a plurality of positions.

The invention discloses a neutron tube target for an associated alpha particle detector. The section of the neutron tube target is pistol-shaped; cooling fins are installed at a pistol-shaped notch; and while the size of the neutron tube target is not increased additionally, heat loaded on a target piece can be rapidly taken away, so that the target piece is guaranteed to be in a relatively low temperature state; the target piece can bear higher beam current power, and then the neutron yield is improved. According to the neutron tube target for the associated alpha particle detector, in an airnatural convection state, the temperature of the target piece can be maintained to be below 200 DEG C, the bombardment of a deuterium ion beam current with the power density of 500 W/cm<2> can be borne, and the neutron yield can reach below 1.1X10<9> n/s.

A method for manufacturing an article capable of constraining a propagating wave is disclosed. The method includes contacting a crystalline substrate with a source of deuterium ions to create a region in the crystalline substrate having a crystal structure that includes deuterium ions. The region is capable of constraining a propagating wave to the region.