The invention relates to an under-
voltage protection circuit suitable for a
neutron radiation environment. The circuit comprises NMOS (N-channel
Metal Oxide Semiconductor) tubes Q1 and Q2, a
voltage-
regulator tube D1, diodes D2 and D3 and resistors R1-R5, the
anode of the
voltage-
regulator tube D1 is connected with the
anode of the
diode D2; the
cathode of the
diode D2 is connected with the first end of the
resistor R1 and the first end of the
resistor R2 at the same time. The second end of the
resistor R2 is connected with the first end of the resistor R5 and the grid
electrode of the NMOS tube Q1 at the same time. The drain
electrode of the NMOS tube Q1 is connected with the first end of the resistor R3 and the grid
electrode of the NMOS tube Q2; the second end of the resistor R5, the first end of the resistor R4, the
cathode of the
diode D3 and the drain electrode of the NMOS tube Q2 are connected; the
cathode of the diode D1, the second end of the resistor R3 and the second end of the resistor R4 are connected to a power supply VCC; the second end of the resistor R1, the source electrode of the NMOS tube Q1 and the source electrode of the NMOS tube Q2 are connected to a reference ground end GND. The device is realized based on a localized VDMOS, and has the characteristics of
neutron displacement
radiation resistance, simple design, easy realization, low cost and the like.