Device and method for measuring multi-wavelength characteristic X ray diffraction

Abstract

The invention relates to a device and a method for measuring multi-wavelength characteristic X ray diffraction of an X ray diffraction spectrum of a measured crystal material sample by selecting a certain characteristic X ray of an X ray tube anode target within a relatively wide wavelength range. The device comprises an X ray tube, a high-pressure generator, a silt, an angle measurer, a detector, a multi-path analyzer, and the like. According to the device and the method disclosed by the invention, large-scale attenuation of the characteristic X ray diffraction due to use of a filter sheet or a crystal monochromator and the like is avoided; required characteristic X rays for measuring needed wavelength can be selected by regulating the tube voltage of the X ray tube and upper and lower thresholds of the multi-path analyzer, so that diffraction rays (characteristic X rays with relatively large wavelengths) on the surface of a sample can be measured in a nondestructive manner, and the diffraction rays (characteristic X rays with relatively small wavelengths) inside the sample can be measured in the nondestructive manner. Moreover, the device is simple and convenient to operate, relatively short in detection time; the characteristic X ray diffraction spectrums obtained by scanning are real and reliable.

Description

technical field

[0001] The invention relates to a multi-wavelength characteristic X-ray diffraction measurement device and method using an X-ray tube with a metal or alloy anode target with a higher atomic number (Z) as a radiation source, especially a method for measuring the X-ray diffraction by adjusting the tube voltage of the X-ray tube and the upper and lower thresholds of the multi-channel analyzer, the detector can be used to arbitrarily select a certain wavelength characteristic X-ray required for measurement from the multiple characteristic X-rays covering a wide wavelength range emitted by the anode target of the X-ray tube, and the measurement is carried out A multi-wavelength characteristic X-ray diffraction measurement device and method for measuring the diffraction spectrum of a crystal material sample and performing X-ray diffraction analysis. Background technique

[0002] X-ray diffraction analysis is mainly used to determine the crystal structure of materia...

Examples

Embodiment 1

[0046] Embodiment 1: see above-mentioned attached figure 1 : a kind of multi-wavelength characteristic X-ray diffraction measurement device during reflection method, comprising the described X-ray tube (1) that anode target is made of Cu of 10<Z<36, high voltage generator (2) power 3KW, output The tube voltage is 5KV~60KV, the divergence between the incident slit (3) and the receiving slit (5) is 1°, the sample (12) is placed on the sample stage (4), and the energy resolution is better than 2% SDD semiconductor detection (7), a 1024-channel multi-channel analyzer (8), a goniometer (6) with a diffraction angle 2θ measuring range of 0° to 165°, a motion controller that controls and drives θ / 2θ, etc. that can move separately (9 ), a computer (10) for measurement control and analysis calculation, and a power supply (11) for power supply, etc. In addition to setting the scanning measurement parameters during the measurement, when using CuKα for diffraction analysis of the sample, ...

Embodiment 2

[0048] Embodiment 2: see above-mentioned attached figure 2 : a multi-wavelength characteristic X-ray diffraction measurement device during the transmission method, comprising the X-ray tube (1) that the anode target is made of Ag with 36≤Z Diffraction analysis on sample surfaces and inside samples of low-Z materials can be performed.

Embodiment 3

[0049] Embodiment 3: see above-mentioned attached figure 1 or attached figure 2 : A multi-wavelength characteristic X-ray diffraction measurement device, comprising the X-ray tube (1) whose anode target is made of W with Z≥54, the high-voltage generator (2) power 3KW, and the output tube voltage 5KV~320KV, A cadmium telluride semiconductor detector (7) with an energy resolution better than 1.5%, the divergence of the incident slit (3) and the receiving slit (5) is 0.1°, and the others are the same as in Embodiment 2. In addition to setting the scanning measurement parameters during the measurement, when WKα is used for diffraction analysis of the sample, the tube voltage is set to 180KV ~ 300KV, the tube current is 2mA ~ 10mA, the lower threshold of the multi-channel analyzer (8) is 58.5Kev, and the upper threshold is 58.5Kev. is 60.0Kev; when using WLα to carry out diffraction analysis of samples, set the tube voltage to 30KV~50KV, tube current to 5mA~30mA, the lower thresh...

technical field

[0001] The invention relates to a multi-wavelength characteristic X-ray diffraction measurement device and method using an X-ray tube with a metal or alloy anode target with a higher atomic number (Z) as a radiation source, especially a method for measuring the X-ray diffraction by adjusting the tube voltage of the X-ray tube and the upper and lower thresholds of the multi-channel analyzer, the detector can be used to arbitrarily select a certain wavelength characteristic X-ray required for measurement from the multiple characteristic X-rays covering a wide wavelength range emitted by the anode target of the X-ray tube, and the measurement is carried out A multi-wavelength characteristic X-ray diffraction measurement device and method for measuring the diffraction spectrum of a crystal material sample and performing X-ray diffraction analysis. Background technique

[0002] X-ray diffraction analysis is mainly used to determine the crystal structure of materia...

Examples

Embodiment 1

[0046] Embodiment 1: see above-mentioned attached figure 1 : a kind of multi-wavelength characteristic X-ray diffraction measurement device during reflection method, comprising the described X-ray tube (1) that anode target is made of Cu of 10<Z<36, high voltage generator (2) power 3KW, output The tube voltage is 5KV~60KV, the divergence between the incident slit (3) and the receiving slit (5) is 1°, the sample (12) is placed on the sample stage (4), and the energy resolution is better than 2% SDD semiconductor detection (7), a 1024-channel multi-channel analyzer (8), a goniometer (6) with a diffraction angle 2θ measuring range of 0° to 165°, a motion controller that controls and drives θ / 2θ, etc. that can move separately (9 ), a computer (10) for measurement control and analysis calculation, and a power supply (11) for power supply, etc. In addition to setting the scanning measurement parameters during the measurement, when using CuKα for diffraction analysis of the sample, ...

Embodiment 2

[0048] Embodiment 2: see above-mentioned attached figure 2 : a multi-wavelength characteristic X-ray diffraction measurement device during the transmission method, comprising the X-ray tube (1) that the anode target is made of Ag with 36≤Z Diffraction analysis on sample surfaces and inside samples of low-Z materials can be performed.

Embodiment 3

[0049] Embodiment 3: see above-mentioned attached figure 1 or attached figure 2 : A multi-wavelength characteristic X-ray diffraction measurement device, comprising the X-ray tube (1) whose anode target is made of W with Z≥54, the high-voltage generator (2) power 3KW, and the output tube voltage 5KV~320KV, A cadmium telluride semiconductor detector (7) with an energy resolution better than 1.5%, the divergence of the incident slit (3) and the receiving slit (5) is 0.1°, and the others are the same as in Embodiment 2. In addition to setting the scanning measurement parameters during the measurement, when WKα is used for diffraction analysis of the sample, the tube voltage is set to 180KV ~ 300KV, the tube current is 2mA ~ 10mA, the lower threshold of the multi-channel analyzer (8) is 58.5Kev, and the upper threshold is 58.5Kev. is 60.0Kev; when using WLα to carry out diffraction analysis of samples, set the tube voltage to 30KV~50KV, tube current to 5mA~30mA, the lower thresh...

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