Device and method for measuring multi-wavelength characteristic X ray diffraction
A measuring device and X-ray technology, applied in the field of X-ray tubes of alloy anode targets, can solve the problems of characteristic X-ray intensity attenuation, long X-ray wavelength, etc.
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Embodiment 1
[0046] Embodiment 1: see above-mentioned attached figure 1 : a kind of multi-wavelength characteristic X-ray diffraction measurement device during reflection method, comprising the described X-ray tube (1) that anode target is made of Cu of 10<Z<36, high voltage generator (2) power 3KW, output The tube voltage is 5KV~60KV, the divergence between the incident slit (3) and the receiving slit (5) is 1°, the sample (12) is placed on the sample stage (4), and the energy resolution is better than 2% SDD semiconductor detection (7), a 1024-channel multi-channel analyzer (8), a goniometer (6) with a diffraction angle 2θ measuring range of 0° to 165°, a motion controller that controls and drives θ / 2θ, etc. that can move separately (9 ), a computer (10) for measurement control and analysis calculation, and a power supply (11) for power supply, etc. In addition to setting the scanning measurement parameters during the measurement, when using CuKα for diffraction analysis of the sample, ...
Embodiment 2
[0048] Embodiment 2: see above-mentioned attached figure 2 : a multi-wavelength characteristic X-ray diffraction measurement device during the transmission method, comprising the X-ray tube (1) that the anode target is made of Ag with 36≤Z Diffraction analysis on sample surfaces and inside samples of low-Z materials can be performed.
Embodiment 3
[0049] Embodiment 3: see above-mentioned attached figure 1 or attached figure 2 : A multi-wavelength characteristic X-ray diffraction measurement device, comprising the X-ray tube (1) whose anode target is made of W with Z≥54, the high-voltage generator (2) power 3KW, and the output tube voltage 5KV~320KV, A cadmium telluride semiconductor detector (7) with an energy resolution better than 1.5%, the divergence of the incident slit (3) and the receiving slit (5) is 0.1°, and the others are the same as in Embodiment 2. In addition to setting the scanning measurement parameters during the measurement, when WKα is used for diffraction analysis of the sample, the tube voltage is set to 180KV ~ 300KV, the tube current is 2mA ~ 10mA, the lower threshold of the multi-channel analyzer (8) is 58.5Kev, and the upper threshold is 58.5Kev. is 60.0Kev; when using WLα to carry out diffraction analysis of samples, set the tube voltage to 30KV~50KV, tube current to 5mA~30mA, the lower thresh...
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