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Rare earth silicates polycrystal material doped with Ce<3+> and preparing method thereof

A rare earth silicate, ion doping technology, applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth and other directions, can solve the problems of the decline of crystal scintillation performance, deterioration of energy resolution, and reduction of crystal light output, etc. Achieve the effect of overcoming large individual differences, conducive to stability, and improving flicker performance

Inactive Publication Date: 2009-03-04
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] A small amount of oxygen is produced, which is not conducive to crystal growth, and will cause more defects in the crystal and decrease the scintillation performance of the crystal
[0011] Therefore, it is necessary to find a breakthrough in material preparation technology (especially polycrystalline material), overcome the shortcomings of the above-mentioned prior art, and solve the problem caused by the use of CeO 2 As a doping raw material, resulting in a large amount of Ce in the subsequent growth crystal 4+ It is very urgent and necessary to reduce the scintillation performance of the crystal light output and deteriorate the energy resolution caused by harmful ions such as

Method used

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  • Rare earth silicates polycrystal material doped with Ce&lt;3+&gt; and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1. With Ce 2 (CO 3 ) 3 Direct synthesis of polycrystalline materials for dopants

[0044] to Ce 2 (CO 3 ) 3 As a dopant raw material, with the main raw material Lu 2 o 3 , SiO 2 Preparation of trivalent cerium ion Ce by direct mixing 3+ Lutetium silicate doped at 0.2 mol%: Lu 1.996 Ce 0..004 SiO 5

[0045] According to step (1) batching in described method A, weigh corresponding raw material components respectively, i.e. Lu 2 o 3 : Ce 2 (CO 3 ) 3 : SiO 2 =0.998:0.002:1 molar ratio, the total weight is about 1Kg; Ce 2 (CO 3 ) 3 As a dopant, with the main raw material Lu 2 o 3 , SiO 2 After direct ball milling to disperse and mix; press into a cake under a pressure of 5GPa in a press; 2 Sintered at 1400°C for 30h in a neutral atmosphere to obtain the required trivalent cerium ion-doped lutetium silicate (Lu 1.996 Ce 0..004 SiO 5 ) polycrystalline material.

Embodiment 2

[0046] Example 2. With Ce 2 (C 2 o 4 ) 3 Direct synthesis of polycrystalline materials for dopants

[0047] to Ce 2 (C 2 o 4 ) 3 As a dopant raw material, with the main raw material Lu 2 o 3 , SiO 2 Direct mixing to prepare Ce 3+ Lutetium silicate with an ion doping concentration of 0.2 mol%: Lu 1.996 Ce 0..004 SiO 5

[0048] According to step 1 batching described in method A, weigh corresponding raw material components respectively, i.e. Lu 2 o 3 : Ce 2 (C 2 o 4 ) 3 : SiO 2 =0.998:0.002:1 molar ratio, the total weight is about 1Kg; process step will Ce 2 (C 2 o 4 ) 3 , with the main raw material Lu 2 o 3 , SiO 2 After direct ball milling to disperse and mix; according to step press the press machine under the pressure of 5GPa to form a cake; adopt the process step to sinter at 1400°C for 30h in an inert atmosphere filled with Ar to obtain the desired Ce 3+ Ion-doped lutetium silicate (Lu 1.996 Ce 0..004 SiO 5 ) polycrystalline material.

Embodiment 3

[0049] Embodiment 3. With Ce (NO 3 ) 3 Direct synthesis of polycrystalline materials for dopants

[0050] With Ce(NO 3 ) 3 As a dopant raw material, with the main raw material Y 2 o 3 , SiO 2 Direct mixing to prepare Ce 3+ Yttrium silicate with an ion doping concentration of 0.2 mol%: Y 1.996 Ce 0..004 SiO 5

[0051] According to the ingredients in step 1 in method A, weigh the corresponding raw material components, namely Y 2 o 3 : Ce(NO 3 ) 3 : SiO 2=0.998:0.004:1 molar ratio, the total weight is about 1Kg; according to the process step in method A, Ce(NO 3 ) 3 As a dopant, with the main raw material Y 2 o 3 , SiO 2 After direct ball milling to disperse and mix; according to step 3, press the material cake under the pressure of 5GPa in the press machine; 2 The desired Ce 3+ Ion-doped yttrium silicate (Y 1.996 Ce 0..004 SiO 5 ) polycrystalline material.

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Abstract

The invention relates to a cerous ion-doped rare earth silicate polycrystal material and a preparation method thereof, which is characterized in that the rare earth silicate is lutecium silicate, yttrium silicate or lutecium and yttrium silicate; the mol percentage of the doped cerous compound is 0.2 percent to 2 percent; the general formula of the doped rare earth silicate is Ln<2(1-x)>Ce2xSiO3, wherein, x is equal to0.002 to 0.02, and Lu is one or two types of Y and Lu. The doped cerous compound is Ce2(CO3)3, Ce(NO3)3, Ce2(C2O4)3, Ce(CH3COO)3 or Ce(OH)3. The polycrystal material is directly synthesized or prepared by doping the cerous compound and liquid-phase mixing. The invention most reduces the introduction of Ce<+4> raw material, eliminates the quenching impact of the Ce<+4> on the luminescence of Ce<+3>, reduces the sintering temperature of the polycrystal material, and improves the scintillation properties of the material, such as light output, energy resolution and the like.

Description

technical field [0001] The present invention relates to a kind of trivalent cerium ion (Ce 3+ ) doped rare earth silicate polycrystalline material and preparation method, more precisely related to Ce 3+ Doped lutetium silicate (Lu 2 SiO 5 ), Yttrium silicate (Y 2 SiO 5 ) or lutetium yttrium silicate (Lu 2(1-x) Y 2x SiO 5 ) The preparation method of polycrystalline material belongs to the field of polycrystalline material preparation for scintillation crystal growth. Background technique [0002] Since Hofstadter first discovered that NaI:T1 crystal has excellent scintillation properties in 1948 and widely used it in the detection of X-rays and γ-rays, people have gradually discovered and applied such as CdWO 4 , BGO (bismuth germanate, molecular formula Bi 3 Ge 4 o 12 Abbreviation), CsI: T1 and other scintillation crystals with excellent performance. These scintillation crystals are made into detectors, which have broad application prospects in the fields of nucl...

Claims

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Application Information

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IPC IPC(8): C30B29/34
Inventor 吴历斌吴承江莞
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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