Semiconductor detector for measuring radiation and imaging device

A semiconductor and detector technology, applied in the field of semiconductor detectors and imaging devices, can solve the problems that counting multi-energy detection and imaging devices cannot fully meet the requirements of strong X-ray machine radiation, and achieve flexible division methods, improved consistency, The effect of simple structure
CN101577284AActive Publication Date: 2009-11-11NUCTECH CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NUCTECH CO LTD
Publication Date
2009-11-11

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Abstract

The invention discloses a semiconductor detector for measuring radiation and an imaging device, wherein the semiconductor detector comprises a semiconductor medium capable of absorbing radiation to be measured of at least one energy section, an anode electrode arranged on one surface of the semiconductor medium, a cathode electrode arranged on another surface of the semiconductor medium opposite to the first surface, and a signal processing circuit which is connected with the anode electrode and the cathode electrode and processes a detected signal as a numerical value representing energy deposition rate of the radiation, wherein the semiconductor medium receives the incident radiation along the direction parallel with the electrode surfaces, and the anode electrode and the cathode electrode are divided into a plurality of sub-electrode couples at intervals along the incident direction of the radiation for detecting the energy deposition rate of the radiation of corresponding energy sections respectively.
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Description

technical field

[0001] The invention relates to a semiconductor detector and an imaging device for measuring radiation, more particularly to a sensor of a multi-energy semiconductor detector for measuring radiation. Background technique

[0002] Cadmium zinc telluride (CdZnTe, hereinafter referred to as "CZT") semiconductor sensors are usually used in gamma and X-ray detectors working at room temperature. Related research began in the 1960s and began to develop rapidly around 1995 . CZT semiconductors have higher atomic numbers (48, 30, 52, respectively) and densities (6g / cm 3 ), which has high detection efficiency for high-energy X and γ-rays. The bandgap of CZT semiconductor is about 1.5eV to 2.2eV, which makes it possible for CZT semiconductor detector to operate at room temperature without cooling system. Moreover, the crystal properties of high-quality CZT crystals will not change significantly in an environment with a wide range of temperature changes, so that the C...

Claims

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