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Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions

A supercritical and nitride technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of shape and size limitation, fast growth in time limitation, inability to obtain large crystal seeds, etc., and reduce the time to achieve Effect

Active Publication Date: 2007-10-24
AMMONO SP Z O O (PL) +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, the rapid growth favoring this method is limited in time, and additionally, the difference in crystal growth rate in different directions creates limitations regarding the shape and size of the obtained crystals.
[0017] Therefore, the first object of the present invention is to provide a method for obtaining bulk single crystals by seed crystal growth, whereby the constraints on the size and shape of the crystals obtained due to the appearance of slow and fast growth directions can be broken. limitations, so large-sized single crystals can be obtained, especially those substrates where satisfactorily large seeds cannot be obtained by currently known methods

Method used

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  • Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions
  • Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions
  • Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions

Examples

Experimental program
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Effect test

Embodiment 1

[0215] Example 1 grows single crystal gallium nitride by crystallization from a supercritical ammonia-containing solution.

[0216] 100cm 3 The dissolution zone of the autoclave was filled with 7.1 g (about 102 mmol) of 6N metal gallium as a raw material. In addition, 4.4 g (about 190 mmol) of 4N metallic sodium was introduced into the autoclave.

[0217] Two elementary seed crystals are placed in the crystallization zone. The basic seed crystal is made of single crystal gallium nitride obtained by the HVPE method, and has a wafer shape. The orientation of the wafer is substantially perpendicular to the c-axis of the crystal. Each wafer is approximately 44 mm long and 200 μm thick. The wafer schematically shown in FIG. 1 has a fast-growing growth surface and has a merged surface at an angle α=45° relative to the growth surface. The basic seed crystals located in a plane are placed in a special holder, so as to provide an angle of 180° between the growth surfaces of the seed crysta...

Embodiment 2

[0223] The same procedure as in Example 1 is followed, with the only exception that the elementary seed crystals are pulled apart from each other parallel to their merging surfaces in the manner shown in FIG. 6a. The obtained crystal has similar values ​​of FWHM, EPD, radius of curvature and electrical properties to the crystal obtained in Example 1. Similar to Example 1, the obtained crystals and the combined basic seed crystals are preserved to be used as seed crystals for free or lateral growth in the next process.

Embodiment 3

[0225] The same procedure as in Example 1 is followed, with the only exception that the elementary seed crystals are pulled apart from each other parallel to their merging surfaces in the manner shown in Figure 6b. The obtained crystal has similar values ​​of FWHM, EPD, radius of curvature and electrical properties to the crystal obtained in Example 1. Similar to Example 1, the obtained crystals and the combined basic seed crystals are preserved to be used as seed crystals for free or lateral growth in the next process.

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Abstract

Composite compounds of tin and lithium, silicon and lithium, or tin, silicon, and lithium having tin and silicon nano-dispersed in a lithium-containing matrix may be used as electrode materials and particularly anode materials for use with rechargeable batteries. Methods of making the composite compounds include the oxidation of alloys, the reaction of stabilized lithium metal powder with tin and silicon oxides, and the reaction of inorganic salts of lithium with tin and silicon containing compounds.

Description

Technical field [0001] The present invention relates to a method for obtaining larger bulk single crystals through seeded growth on a slender seed crystal or two or more slender seed crystals. Background technique [0002] For the optoelectronics industry, nitrides of group XIII elements including gallium nitrides (IUPAC, 1989) are a class of valuable materials. [0003] Bulk single crystal GaN is considered to be an ideal substrate for depositing GaN epitaxial layers, and the energy gap of this single crystal can be used to manufacture blue light emitting laser diodes (LD) and light emitting diodes (LED). The conditions used as a substrate for oriented growth are good crystal quality of single crystals and low surface dislocation density. [0004] Although intelligence shows that research conducted in many industrial and scientific centers around the world each year brings manufacturers closer to obtaining materials of suitable quality, it still cannot meet the industry's demand...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18C30B29/40C30B9/00
CPCC30B7/10H01S2301/173H01S2304/04H01S5/2214H01S5/34333C30B29/403C30B29/406C30B7/00H01S5/2231B82Y20/00C30B29/38
Inventor 罗伯特·德威林斯基罗曼·多拉辛斯基哲兹·卡兹尼斯基莱哲克·西芝普陶斯基神原康雄
Owner AMMONO SP Z O O (PL)
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