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Ga-Ge-Sb-Te film material used for phase change memory

A ga-ge-sb-te, phase-change memory technology, applied in the field of microelectronics, can solve the problems of unguaranteed data retention, restricted application fields, poor thermal stability, etc., and achieve strong data retention, Adjustable physical properties and good thermal stability

Active Publication Date: 2013-04-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the existing Ge 2 Sb 2 Te 5 There are still some problems in the phase change memory of phase change materials: 1) The crystallization temperature is low, facing the danger of data loss; 2) The thermal stability is not good, and the data retention cannot be guaranteed, and it can provide 10 years of reliable The working temperature of data storage is only 80 degrees, which seriously restricts its application field

Method used

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  • Ga-Ge-Sb-Te film material used for phase change memory
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  • Ga-Ge-Sb-Te film material used for phase change memory

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Embodiment Construction

[0016] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0017] see Figure 1 to Figure 5 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a Ga-Ge-Sb-Te film material used for a phase change memory. The general formula of the Ga-Ge-Sb-Te film material is GaxGeySbzTew, wherein x is more than 0 and less than or equal to 16, y is more than or equal to 23 and less than or equal to 28, z is more than or equal to 26 and less than or equal to 31, and w is more than or equal to 30 and less than or equal to 40. The Ga-Ge-Sb-Te film material provided by the invention has the characteristics of high crystallization temperature, good thermal stability and strong data retentivity and can be applied to high temperature fields such as automotive electronics.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a Ga-Ge-Sb-Te film material used for a phase-change memory. Background technique [0002] Phase change memory (PCM) is a non-volatile semiconductor memory that has emerged in recent years. Compared with traditional memory, it has the advantages of small memory cell size, high read and write speed, low power consumption, long cycle life, and excellent radiation resistance. Based on the above advantages, phase change memory can not only replace the existing memory, but also create new applications in some fields (such as space, aerospace technology and military fields) that cannot be reached by ordinary memory. Phase change memory is a strong competitor in new storage technology, and it is expected to replace flash memory (Flash technology) as the mainstream storage technology of the next generation of non-volatile memory, so it has a broad market prospect. [0003] The ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C22C12/00
Inventor 张中华宋三年宋志棠吕叶刚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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