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U-shaped trench type semiconductor device and manufacture method thereof

A semiconductor, U-shaped technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of unfavorable chip miniaturization development, reduction of chip density, large unit area, etc., and achieve strong data retention and operation The effect of low voltage and small cell area

Inactive Publication Date: 2014-10-15
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] In order to ensure the performance of the semiconductor memory, the semiconductor memory of the planar channel needs a longer channel length, which makes the unit area of ​​the semiconductor memory larger, thereby reducing the chip density, which is not conducive to the development of the chip in the direction of miniaturization

Method used

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  • U-shaped trench type semiconductor device and manufacture method thereof
  • U-shaped trench type semiconductor device and manufacture method thereof
  • U-shaped trench type semiconductor device and manufacture method thereof

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Embodiment Construction

[0044] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention.

[0045] figure 2 , image 3 and Figure 4 These are three embodiments of sem...

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Abstract

The invention pertains to the technical field of semiconductor memories, and specifically relates to a U-shaped trench type semiconductor device which comprises at least one semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a U-shaped trench region and a gate-control p-n junction diode for connecting the floating gate and the drain region. The U-shaped trench type semiconductor device provided in the invention uses the floating gate to store information, and perform charging and discharging on the floating gate through the gate-control p-n junction diode, so advantages of small unit area, high chip density, low operating voltage during data storage and good data rentation capability can be realized.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a U-shaped channel semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor memory. Background technique [0002] Semiconductor memories are widely used in various electronic products. Different application areas place different requirements on the structure, performance and density of semiconductor memories. For example, static random access memory (SRAM) has high random access speed and low integration density, while standard dynamic random access memory (DRAM) has high density and medium random access speed. [0003] figure 1 It is a semiconductor memory with a planar channel in the prior art, including: a source region 501 and a drain region 502 formed in a semiconductor substrate 500 with an opposite doping type to that of the semiconductor substrate, and the semiconductor substrate 500 can be a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/423H01L21/28H01L21/336
CPCH01L29/7835H01L29/423H01L29/10H01L29/7391
Inventor 刘伟刘磊王鹏飞
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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