4results about How to "Small unit area" patented technology

This application provides a three-dimensional memory structure, its fabrication method, and an electronic device. The three-dimensional memory structure includes: a peripheral circuit chip, a memory array, a first word line lead-out structure, and a second word line lead-out structure. The memory array includes multiple array cell layers stacked vertically, each array cell layer including multiple memory cells arranged in an array, each memory cell including a horizontal ring-gate transistor and a capacitor arranged along a second horizontal direction; a stepped region forms a multi-layer stepped structure, the multi-layer stepped structure including a first stepped structure and a second stepped structure stacked vertically; the first stepped structure has multiple levels of first mezzanines, and the second stepped structure has multiple levels of second mezzanines; the multiple levels of first mezzanines and multiple levels of second mezzanines extend sequentially along the first horizontal direction and are opposite to each other; the first word line lead-out structure electrically connects the multiple levels of first mezzanines and the peripheral circuit chip, and the second word line lead-out structure electrically connects the multiple levels of second mezzanines and the peripheral circuit chip.

The invention relates to the technical field of nano devices, in particular to a nano device structure and a preparation method thereof, and the nano device structure comprises a substrate, a shallow slot isolation region, a nanosheet channel, a metal gate, a source electrode and a drain electrode; the nanosheet channel is located above the substrate, and the metal gate surrounds the nanosheet channel; the shallow trench isolation regions are positioned on two sides of the substrate; the source and drain electrodes are connected with the nanosheet channel; a side wall structure is arranged between the source and drain electrodes and the metal gate; the source and drain electrode comprises a bottom source and drain electrode and a top source and drain electrode, an isolation layer is arranged between the bottom source and drain electrode and the top source and drain electrode, and a step-shaped structure is formed between the layer where the top source and drain electrode is located and the isolation layer. By preparing the step-shaped complementary field effect nano device structure, the source electrode and the drain electrode can be interconnected upwards, and the unit area of the device is effectively reduced; and the bottom device interconnection line does not influence the channel region, so that the current intensity is not reduced.

The present application belongs to the technical field of non-woven fabric preparation, and particularly relates to a polyester and pre-oxidized yarn mixed non-woven fabric, a preparation method thereof and application. According to the weight percentage, the mixed non-woven fabric comprises the following components: 15%-70% of polyester and 30%-85% of pre-oxidized yarn. The present application provides a polyester and pre-oxidized yarn mixed non-woven fabric, a preparation method thereof and application of the non-woven fabric in carbon fiber preparation. By reasonably selecting the proportion of polyester and pre-oxidized yarn (15%-70% of polyester and 30%-85% of pre-oxidized yarn) and adopting specific opening, carding, laying and needling processes, technical difficulties such as easy breaking, uneven distribution and poor entanglement of the mixed fibers in the processing process are successfully solved.

The application relates to the technical field of functional coatings, and discloses a non-ignition type bio-based bamboo fiber coating which is composed of inorganic cementing material, modified bamboo fiber, inorganic aggregate, conductive filler, defoaming agent, dispersing agent and water in a certain proportion. The modified bamboo fiber is immersed in a mixed solution of ammonium dihydrogen phosphate and boric acid and is coated with nano silicon dioxide sol, so that the coating has excellent flame-retardant performance; the conductive filler is compounded by nano tin antimony oxide and conductive mica powder; the coating takes natural bamboo fiber as a functional carrier, is green and environment-friendly, has excellent performance in three dimensions of non-ignition, anti-static and flame retardation.