Random access memory with redundant structure

Abstract

The invention discloses a random access memory with a redundant structure. The random access memory comprises two same memory unit arrays, a data writing circuit and a data reading circuit, wherein the two same memory unit arrays have same array frameworks; memory units at the same address in the arrays have the same initial memory information; the data writing circuit is used for simultaneously writing the same data into the memory units at the same addresses in the two same memory arrays; and the data reading circuit is used for selecting memory information in the memory units at the same addresses in the two memory unit arrays, outputting 0 when the memory information in the two memory units is not different and outputting the same memory information when the memory information in the two memory units is the same. The random access memory has the advantages of small hardware area, low complexity, stable and reliable data storage and the like.

Description

technical field

[0001] The invention belongs to the technical field of memory design, and in particular relates to a redundant structure random access memory. Background technique

[0002] With the development of nuclear energy technology and space technology, more and more electronic devices need to be used in various radiation environments. With the improvement of system performance requirements for space applications, the reduction of device feature size and the advancement of technology, the sensitivity of semiconductor devices to space radiation increases, and the influence of single event effects (Single Event Effect, SEE) is rapidly expanding. Static Random Access Memory (SRAM) is widely used in various military and space systems. However, the bistable circuit structure of the SRAM unit is particularly sensitive to the single event upset effect, which will cause errors in stored data and disordered instruction programs. In severe cases, it will cause the failure of t...

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