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U-shaped channel semiconductor photosensitive device and manufacturing method thereof

A technology for photosensitive devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, radiation control devices, etc., can solve the problems of unfavorable chip miniaturization development, lower chip density, large unit area, etc., and achieve shortened channel length , increase the resolution, the effect of small unit area

Active Publication Date: 2015-04-29
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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Problems solved by technology

[0005] In order to ensure the performance of the semiconductor photosensitive device, the semiconductor photosensitive device with a planar channel needs a longer channel length, which makes the unit area of ​​the semiconductor photosensitive device larger, thereby reducing the chip density, which is not conducive to the development of the chip in the direction of miniaturization. At the same time, the light absorption region of the photosensitive pn junction diode of the planar channel semiconductor photosensitive device in Chinese patent 200910234800.9 is located on the surface of the semiconductor substrate, which is easily disturbed

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  • U-shaped channel semiconductor photosensitive device and manufacturing method thereof
  • U-shaped channel semiconductor photosensitive device and manufacturing method thereof
  • U-shaped channel semiconductor photosensitive device and manufacturing method thereof

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Embodiment Construction

[0043]The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiments of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Also in the following description, the term substrate used may be understood to i...

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Abstract

The invention discloses a U-shaped channel semiconductor photosensitive device and a manufacturing method thereof. The U-shaped channel semiconductor photosensitive device comprises a U-shaped channel MOS (Metal Oxide Semiconductor) transistor formed in a semiconductor substrate, a photosensitive p-n junction diode and a pinning diode, wherein a floating gate of the U-shaped channel MOS transistor is connected with one end of the photosensitive p-n junction diode through a floating gate opening and is also connected with one end of the pinning diode; a drain region of the U-shaped channel MOS transistor is connected with the other end of the photosensitive p-n junction diode and is also connected with the other end of the pinning diode. The U-shaped channel semiconductor photosensitive device disclosed by the invention has the advantages of small unit area, high chip density, high sensitivity and the like, and the resolution ratio of an image sensor chip is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a U-shaped channel semiconductor photosensitive device and a manufacturing method thereof. Background technique [0002] Image sensors are semiconductor photosensitive devices used to convert optical signals into electrical signals. Image sensor chips composed of image sensor devices are widely used in multimedia products such as digital cameras, video cameras, and mobile phones. [0003] Chinese patent 200910234800.9 proposes a planar channel semiconductor photosensitive device, such as figure 1 , which is a cross-sectional view along the channel length of the device. The semiconductor photosensitive device 10 is usually formed in a semiconductor substrate or a doped well 500, the semiconductor substrate or the doped well 500 is doped with a low concentration of n-type or p-type impurities, and the two sides of the semiconductor photosensitive device are separated...

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Application Information

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IPC IPC(8): H01L27/146H01L21/8238
Inventor 刘伟龚轶刘磊
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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