Flash memory device with single-poly structure and method for manufacturing the same
A technology of flash memory device and polycrystalline structure, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as unit size reduction, large area, complex unit structure, etc.
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[0020] Embodiments of the present invention will now be described in detail with reference to the embodiments depicted in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
[0021] Hereinafter, a flash memory device having a single polycrystalline structure and a manufacturing method thereof according to a preferred embodiment of the present invention will be described with reference to FIGS. 2A to 2H.
[0022] First, as shown in FIG. 2A , an oxide layer 110 is formed on the semiconductor substrate 100 , and dopants are implanted into the semiconductor substrate 100 to form an HP well or HN well region 120 .
[0023] Then, in order to form shallow trench isolation (STI) as shown in FIG. 2B , photoresist 130 is disposed over regions of oxide layer 110 excluding regions used to form device insulating layers (not shown). When the oxide layer 110 is etched using the photoresist 130 as ...
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