Pressure sensor and manufacturing method thereof

A pressure sensor, piezoelectric technology, applied in piezoelectric devices/electrostrictive devices, measurement of property force using piezoelectric devices, fluid pressure measurement using piezoelectric devices, etc., can solve the problem of difficult to control the uniformity of nanofiber clusters. It can solve the problems of high sensitivity, small unit area, and improved integration.

Inactive Publication Date: 2015-11-18
FUDAN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

Due to the large size of a single device of a traditional pressure sensor, the integration level is very low
[0004] Wang Zhonglin et al. used zinc oxide nanofibers to make piezoelectric pressure sensors[1], which greatly increased th

Method used

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  • Pressure sensor and manufacturing method thereof
  • Pressure sensor and manufacturing method thereof
  • Pressure sensor and manufacturing method thereof

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[0033] The present invention will be further described in detail below with reference to the drawings and specific embodiments. In the figure, for convenience of description, the thickness of layers and regions are enlarged, and the size shown does not represent the actual size. The reference figure is a schematic diagram of an idealized embodiment of the present invention. The embodiment shown in the present invention should not be regarded as limited to the specific shape of the area shown in the figure, but includes the resulting shape, such as deviations caused by manufacturing. For example, the curves obtained by etching usually have the characteristics of bending or roundness, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention.

[0034] figure 1 It is an embodiment of the pressure sensor proposed by the present ...

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Abstract

The invention belongs to the technical field of semiconductor sensors, and particularly discloses a pressure sensor and a manufacturing method thereof. The pressure sensor disclosed by the invention comprises at least one field effect transistor and a piezoelectric control gate, wherein the field effect transistor is an N-channel metal oxide semiconductor (NMOS) transistor or a P-channel metal oxide semiconductor (PMOS) transistor; the piezoelectric control gate comprises a piezoelectric film, an upper surface electrode of the piezoelectric film, a lower surface electrode of the piezoelectric film and a connection electrode; and the connection electrode is arranged between a gate of the field effect transistor and the lower surface electrode of the piezoelectric film. The pressure sensor disclosed by the invention is used for sensing a pressure signal, and has the characteristics of being simple in manufacturing process, small in cell area, high in chip integration level, high in sensitivity on pressure and the like.

Description

technical field [0001] The invention belongs to the technical field of pressure sensors, and in particular relates to a highly integrated pressure sensor and a manufacturing method thereof, in particular to a pressure sensor combined with a piezoelectric film and a field effect transistor and a manufacturing method thereof. Background technique [0002] Pressure sensors are widely used in electronic products. Different application fields have different requirements for the structure, performance and density of pressure sensors. Some require higher resolution, such as electronic scales and barometers; High integration density, such as touch screen. In order to realize the perception of tiny external pressure signals, smart skin requires both higher resolution and higher integration density. [0003] Traditional pressure sensors are divided into semiconductor piezoresistive pressure sensors and electrostatic capacitive pressure sensors. The former is to deform the sheet by ex...

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Application Information

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IPC IPC(8): H01L41/08G01L1/16G01L9/08
Inventor 张敬维曾瑞雪吴东平
Owner FUDAN UNIV
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