Pressure sensor and manufacturing method thereof

Abstract

The invention belongs to the technical field of semiconductor sensors, and particularly discloses a pressure sensor and a manufacturing method thereof. The pressure sensor disclosed by the invention comprises at least one field effect transistor and a piezoelectric control gate, wherein the field effect transistor is an N-channel metal oxide semiconductor (NMOS) transistor or a P-channel metal oxide semiconductor (PMOS) transistor; the piezoelectric control gate comprises a piezoelectric film, an upper surface electrode of the piezoelectric film, a lower surface electrode of the piezoelectric film and a connection electrode; and the connection electrode is arranged between a gate of the field effect transistor and the lower surface electrode of the piezoelectric film. The pressure sensor disclosed by the invention is used for sensing a pressure signal, and has the characteristics of being simple in manufacturing process, small in cell area, high in chip integration level, high in sensitivity on pressure and the like.

Description

technical field [0001] The invention belongs to the technical field of pressure sensors, and in particular relates to a highly integrated pressure sensor and a manufacturing method thereof, in particular to a pressure sensor combined with a piezoelectric film and a field effect transistor and a manufacturing method thereof. Background technique [0002] Pressure sensors are widely used in electronic products. Different application fields have different requirements for the structure, performance and density of pressure sensors. Some require higher resolution, such as electronic scales and barometers; High integration density, such as touch screen. In order to realize the perception of tiny external pressure signals, smart skin requires both higher resolution and higher integration density. [0003] Traditional pressure sensors are divided into semiconductor piezoresistive pressure sensors and electrostatic capacitive pressure sensors. The former is to deform the sheet by ex...

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Problems solved by technology

Due to the large size of a single device of a traditional pressure sensor, the integration level is very low

[0004] Wang Zhonglin et al. used zinc oxide nanofibers to make piezoelectric pressure sensors[1], which greatly increased the integration density of the device, but due to the difficulty in controlling the uniformity of nanofiber clusters, the process of piezoelectric pressure sensors was very complicated and increased the number of devices. the cost of

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