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114results about How to "High pressure" patented technology

Method and Apparatus for Microwave Assisted High Throughput High Pressure Chemical Synthesis

A method and associated instrument are disclosed for increasing the sequential rate at which a series of microwave assisted chemical reactions that potentially generate high pressure can be carried out. The method includes the steps of opening a pressure-resistant valve on a microwave-transparent pressure-resistant vessel to define a unpressurized pathway through the valve into the vessel, inserting a tube through the pathway in the valve and into the vessel, transferring at least one composition into the vessel through the tube, removing the tube from the vessel and from the pathway in the valve, closing the valve to seal the vessel against pressure release, and exposing the vessel and its contents to microwave radiation. The instrument includes a source of microwave radiation, a cavity in microwave communication with the source, an attenuator that forms at least a portion of the cavity, a pressure-resistant microwave-transparent reaction vessel having portions in the cavity and portions in the attenuator, a pressure-resistant valve on the mouth of the vessel, a reciprocating tube for passing through the valve and into the vessel when the valve is open, and means for mechanically inserting and retracting the tube through the valve and into the vessel when the vessel is in the cavity and the attenuator.
Owner:CEM CORP

Winding evaporation type vacuum coating machine

The invention belongs to the technical field of vacuum coating, and especially relates to a winding evaporation type vacuum coating machine. The vacuum coating machine comprises a vacuum chamber, and a rolling evaporation system, a shielding system and a motor which are arranged in the vacuum chamber. An unwinding shaft is arranged at the top left corner of the vacuum chamber, a winding shaft is arranged at the top right angle of the vacuum chamber, a first evaporation coating drum and a second evaporation coating drum are arranged between the unwinding shaft and the winding shaft side by side, and are positioned below the unwinding shaft and the winding shaft. A first aluminum evaporator is positioned just below the first evaporation coating drum, and a second aluminum evaporator is positioned just below the second evaporation coating drum; and the shielding system is positioned at the bottom right corner of the vacuum chamber, the shielding steel band of the shielding system traverses between the second aluminum evaporator and the second evaporation coating drum, and the aluminum recovery device of the shielding system is arranged at the bottom right of the shielding system. Each of the winding evaporation system and the shielding system is connected with the motor. The vacuum coating machine has the advantages of one-time completion of the coating and edge thickening, long storage time, stable and unchanged performances, simple operation and production efficiency increase.
Owner:郑州华翔电子信息技术有限公司

Three-dimensional multi-trench gate enhanced HEMT device and preparation method thereof

The invention provides a three-dimensional multi-trench gate enhanced HEMT device and a preparation method thereof. The three-dimensional multi-trench gate enhanced HEMT device comprises a substrate, a heterojunction, a gate, a source and a drain, wherein the heterojunction is arranged at the upper part of the substrate; the gate is provided with a three-dimensional multi-trench gate structure formed by a plurality of U-shaped grooves; the three-dimensional multi-trench gate structure is formed by etching the heterojunction; the distances between adjacent U-shaped grooves are sequentially reduced in the direction from the drain to the source; and the lengths of the U-shaped grooves are sequentially increased. The preparation method comprises the following steps: manufacturing a wafer of the device; defining isolation between the active region of the device and the device; depositing a metal film in the areas of the source and the drain to obtain the source and the drain of the device; and locally etching a heterojunction layer to prepare the three-dimensional multi-trench gate structure, and depositing the metal film on the upper part of the three-dimensional multi-trench gate to prepare the gate. Compared with a conventional trench gate structure, by the three-dimensional multi-trench gate structure, the electron concentration at the lower part of the gate gradually changes to form gradient distribution; and electric field distribution of the gate area is optimized, so that the reverse withstand voltage of the device and the reliability in a high electric field are improved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
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