Semiconductor photosensitive device and manufacturing method thereof

A technology for photosensitive devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high drain resistance and easy interference of semiconductor photosensitive devices, and achieve reduced resistance, high sensitivity, and unit small area effect
CN103594477AInactive Publication Date: 2014-02-19FUDAN UNIV
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
FUDAN UNIV
Publication Date
2014-02-19
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a semiconductor photosensitive device and a manufacturing method of the semiconductor photosensitive device. The semiconductor photosensitive device comprises an MOS transistor, a photosensitive pn junction diode and a pinning diode, wherein the MOS transistor, the photosensitive pn junction diode and the pinning diode are formed in a semiconductor substrate, a floating gate of the MOS transistor is connected with one end of the photosensitive pn junction diode through a floating gate opening and connected with one end of the pinning diode, the photosensitive pn junction diode and the pinning diode are surrounded by an annular drain region of the MOS transistor and the annular drain region of the MOS transistor is connected with the other end of the photosensitive pn junction diode and the other end of the pinning diode. A light absorption zone of the photosensitive pn junction diode can be pushed into the semiconductor substrate by the pinning diode and is far away from the interfered surface. An image sensor chip manufactured through the semiconductor photosensitive device has the advantages of being small in unit area, high in chip density, high in sensitivity, high in resolution ratio and the like.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a semiconductor photosensitive device and a manufacturing method thereof. Background technique

[0002] Image sensors are semiconductor photosensitive devices used to convert optical signals into electrical signals. Image sensor chips composed of image sensor devices are widely used in multimedia products such as digital cameras, video cameras, and mobile phones.

[0003] A semiconductor photosensitive device is proposed in Chinese patent 200910234800.9, such as figure 1 , which is a cross-sectional view along the channel length of the device. The semiconductor photosensitive device 10 is usually formed in a semiconductor substrate or a doped well 500, the semiconductor substrate or the doped well 500 is doped with a low concentration of n-type or p-type impurities, and the two sides of the semiconductor photosensitive device are separated by shallow tr...

Claims

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