Semiconductor photosensitive device and manufacturing method thereof

A technology for photosensitive devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high drain resistance and easy interference of semiconductor photosensitive devices, and achieve reduced resistance, high sensitivity, and unit small area effect

Inactive Publication Date: 2014-02-19
FUDAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In the Chinese patent 200910234800.9, the light-absorbing region of the photosensitive pn junction diode of the semiconductor photosensitive device is located on the surface of the semiconductor substrate, which is easily disturbed, and the drain resistance of the semiconductor photosensitive device is relatively high

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  • Semiconductor photosensitive device and manufacturing method thereof
  • Semiconductor photosensitive device and manufacturing method thereof
  • Semiconductor photosensitive device and manufacturing method thereof

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Embodiment Construction

[0041] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiments of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Also in the following description, the term substrate used may be understood to ...

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Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a semiconductor photosensitive device and a manufacturing method of the semiconductor photosensitive device. The semiconductor photosensitive device comprises an MOS transistor, a photosensitive pn junction diode and a pinning diode, wherein the MOS transistor, the photosensitive pn junction diode and the pinning diode are formed in a semiconductor substrate, a floating gate of the MOS transistor is connected with one end of the photosensitive pn junction diode through a floating gate opening and connected with one end of the pinning diode, the photosensitive pn junction diode and the pinning diode are surrounded by an annular drain region of the MOS transistor and the annular drain region of the MOS transistor is connected with the other end of the photosensitive pn junction diode and the other end of the pinning diode. A light absorption zone of the photosensitive pn junction diode can be pushed into the semiconductor substrate by the pinning diode and is far away from the interfered surface. An image sensor chip manufactured through the semiconductor photosensitive device has the advantages of being small in unit area, high in chip density, high in sensitivity, high in resolution ratio and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a semiconductor photosensitive device and a manufacturing method thereof. Background technique [0002] Image sensors are semiconductor photosensitive devices used to convert optical signals into electrical signals. Image sensor chips composed of image sensor devices are widely used in multimedia products such as digital cameras, video cameras, and mobile phones. [0003] A semiconductor photosensitive device is proposed in Chinese patent 200910234800.9, such as figure 1 , which is a cross-sectional view along the channel length of the device. The semiconductor photosensitive device 10 is usually formed in a semiconductor substrate or a doped well 500, the semiconductor substrate or the doped well 500 is doped with a low concentration of n-type or p-type impurities, and the two sides of the semiconductor photosensitive device are separated by shallow tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L29/06H01L29/78H01L21/8238H01L21/336
Inventor 王鹏飞吴俊孙清清张卫
Owner FUDAN UNIV
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