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Resistive random access memory

A technology of resistive random access memory, applied in the field of memory, can solve the problems of durability and data retention limitations, and it is difficult for RRAM to return to a high resistance state, and achieve the effect of good durability

Pending Publication Date: 2021-06-04
WINBOND ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, RRAM has an increasingly high probability of being difficult to return to a high-resistance state after multiple SET / RESET cycles, which limits durability and data retention

Method used

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Embodiment Construction

[0018] Exemplary embodiments of the present invention will be described more fully hereinafter with reference to the accompanying drawings; however, the invention may be embodied in different forms and are not limited to the embodiments set forth herein.

[0019] figure 1 is a schematic cross-sectional view of a resistive random access memory according to an embodiment of the present invention. figure 2 It is a schematic diagram of the distribution of the oxygen content of the resistive random access memory according to an embodiment of the present invention as it changes with different positions.

[0020] Please refer to figure 1 , the RRAM 100 includes a first electrode 102 , a second electrode 104 , a variable resistance layer 106 , a first metal layer 108 , a resistance stable layer 110 , a second metal layer 112 , and a barrier layer 114 .

[0021] The material of the first electrode 102 is not particularly limited, and any conductive material can be used. For example...

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Abstract

The invention provides a resistive random access memory. The resistive random access memory comprises a first electrode, a second electrode, a variable resistance layer, a first metal layer, a second metal layer and a resistance stabilizing layer, wherein the second electrode is disposed on the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The first metal layer is disposed between the variable resistance layer and the second electrode. The second metal layer is disposed between the first metal layer and the second electrode. The resistance stabilizing layer is disposed between the first metal layer and the second metal layer. The oxygen content of the variable resistance layer is higher than that of the first metal layer, the oxygen content of the first metal layer is higher than that of the resistance stabilizing layer, and the oxygen content of the resistance stabilizing layer is higher than that of the second metal layer. The resistive random access memory has good durability, reset characteristics and data retention capability.

Description

technical field [0001] The present invention relates to a memory, in particular to a resistive random access memory (resistive random access memory, RRAM). Background technique [0002] RRAM has the advantages of fast operation speed and low power consumption, and has become a non-volatile memory that has been widely studied in recent years. However, RRAM has an increasingly high probability of being difficult to return to a high-resistance state after multiple SET / RESET cycles, which limits endurance and data retention capabilities. Therefore, how to improve the durability and data retention capability of the RRAM is currently a goal actively pursued by the industry. Contents of the invention [0003] The invention provides a resistive random access memory, which has good durability, reset characteristics and data retention. [0004] The resistive random access memory of the present invention comprises a first electrode, a second electrode, a variable resistance layer, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/011H10N70/8833
Inventor 许博砚吴伯伦王炳琨林铭哲陈侑廷白昌宗廖绍憬刘奇青
Owner WINBOND ELECTRONICS CORP
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