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Phase change memory material and preparation method thereof

A phase-change storage and phase-change technology, applied in the field of phase-change storage materials and their preparation, can solve the problems of large density changes, weak data retention performance, and poor crystallization speed of phase-change storage materials, and achieve strong data retention, Excellent thermal stability and low power consumption

Active Publication Date: 2013-05-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0006] The object of the present invention is to provide a phase-change memory material and a preparation method thereof, which are used to solve the problems of large density changes, poor crystallization speed, low crystallization temperature, and poor thermal stability of phase-change memory materials in the prior art during phase change. Poor and weak data retention performance

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Embodiment Construction

[0019] The inventors of the present invention have found that in the existing phase-change memory, the phase-change memory material of germanium-antimony-tellurium ternary system is widely used. Poor and low crystallization temperature, poor thermal stability and weak data retention performance.

[0020] Therefore, the inventors of the present invention have improved the prior art and proposed a novel phase-change memory material and its preparation method. The phase-change memory material is a compound of silicon-bismuth-tellurium and has nanocomposite properties. The crystal grain is small, the heating efficiency is high, and the device storage speed is fast; and it has the advantages of high crystallization temperature, good thermal stability and strong data retention.

[0021] The invention will be described in detail below through specific examples.

[0022] The invention provides a phase-change memory material which is a compound of silicon-bismuth-tellurium, whose gene...

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Abstract

The invention provides a phase change memory material and a preparation method thereof. The phase change memory material is the compound of silicon-bismuth-tellurium, the general equation is SiBiyTe100-(x+y), wherein x is more than 10 but less than 90, and y is more than 0 and less than 50. Compared with the prior art, the phase change memory material has the advantages of being simple in structure, small in grains, high in heating efficiency, low in power dissipation, fast in device storage speed, high in crystallization temperature, good in heat stability, strong in data retention and the like.

Description

technical field [0001] The invention relates to the field of memory, in particular to a phase-change memory material applied to a memory device and a preparation method thereof. Background technique [0002] In the semiconductor market, memory (such as DRAM and FLASH) occupies an important seat. With the gradual popularization of portable electronic devices, the market for non-volatile memory will continue to expand, and consumers' requirements for memory capacity and speed will also increase. As the mainstream memory of non-volatile memory, the development of FLASH technology has reached the bottleneck. With the continuous development of integrated circuits, the technical weakness of FLASH has become prominent. The disadvantages of slow writing speed, high writing voltage, and limited number of cycles directly limit its further application. Therefore, a new storage technology is urgently needed to replace it, so that the storage technology can continue to develop steadily ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 许建安饶峰宋志棠刘波吴良才
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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