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Optical phase change storage material based on arsenic tellurium compound, device and preparation method thereof

A tellurium compound, phase change storage technology, applied in electrical components and other directions, can solve the problems of restricting the performance of related phase change materials, poor amorphous stability, low crystallization temperature, etc., and achieve good optical reflectivity/transmittance contrast, The effect of stable performance and simple process

Pending Publication Date: 2022-04-26
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Sb 2 Te 3 The crystallization temperature of the compound is low (about 85°C), the amorphous stability is poor, and it faces the risk of data loss in the actual service environment. This shortcoming restricts the performance of related phase change materials developed based on it to a certain extent.

Method used

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  • Optical phase change storage material based on arsenic tellurium compound, device and preparation method thereof
  • Optical phase change storage material based on arsenic tellurium compound, device and preparation method thereof
  • Optical phase change storage material based on arsenic tellurium compound, device and preparation method thereof

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Embodiment 1

[0034] This embodiment provides an optical phase-change storage material and device unit based on arsenic-tellurium compound, the phase-change material includes arsenic (As) element and tellurium (Te) element, and its chemical formula is As x Te y , where 12 Te 3 . Its crystal structure contains two kinds of α phase and β phase. In the α crystal phase, some As atoms have a coordination number of 6, and the remaining As atoms are in defect octahedra, and there are 5 adjacent Te atoms. In the β crystal phase, the As atom usually forms a coordination octahedron with six adjacent Te atoms. Its crystal structure is as figure 1 shown.

[0035] The phase change material has a large number of homopolar chemical bonds and a five-membered ring structure in the amorphous phase, and its local structure is greatly different from that of the crystal phase. As used in this case 2 Te 3 Phase change materials, whose crystallization temperature is about 180°C, have good amorphous stabil...

Embodiment 2

[0041] The invention proposes an optical phase-change storage device unit based on arsenic-tellurium compound phase-change materials. The optical phase-change memory unit at least includes a substrate layer, an optical waveguide material layer and a phase-change material layer, and the three material layers are stacked sequentially from bottom to top. The phase-change material layer is the arsenic-tellurium compound phase-change material described in the above invention. The phase-change material layer includes the arsenic-tellurium compound phase-change storage material provided in Example 1, whose chemical formula is As x Te y , where 1<x<3, 2<y<4.

[0042] In the optical phase change memory device unit, the material of the substrate layer needs to have the characteristics of no light absorption, low refractive index, etc., and can be used but not limited to SiO 2 and Al 2 o 3 Material. The optical waveguide material layer can be used but not limited to Si 3 N 4 , In...

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Abstract

The invention discloses an optical phase change storage material based on an arsenic-tellurium compound, a device and a preparation method thereof, the optical phase change storage material comprises an arsenic (As) element and a tellurium (Te) element, the chemical formula of the phase change material is AsxTey, xlt; 3, 2lt; yt; Yt; 4. The phase change material is high in crystallization temperature and good in amorphous stability, meanwhile, the reflectivity / transmittance difference of the crystal phase and the amorphous phase of the material within the visible light range is large, binary logic recognition of 0 and 1 is expected to be broken through, and stable recognition of multiple optical reflectivity / transmittance states is achieved in the same device unit. The optical phase change memory provided by the invention comprises a substrate layer, an optical waveguide material layer and a phase change material layer which are sequentially stacked from bottom to top, and the phase change material used by the phase change material layer is the arsenic tellurium compound phase change material. An optical phase change memory device with strong data retention and stable performance can be prepared based on the arsenic tellurium compound optical phase change memory material, and a multi-valued optical phase change memory or a brain-like computing device is expected to be prepared.

Description

technical field [0001] The invention relates to the technical field of phase-change storage materials and devices, in particular to an optical phase-change storage material based on arsenic-tellurium compounds, a device and a preparation method thereof. Background technique [0002] The rapid rise and development of advanced data-intensive technologies such as artificial intelligence, big data, and cloud computing pose great challenges to the data storage and processing capabilities of computing devices. In the face of the imminent data storage crisis, the academic community and the industry are actively developing non-volatile storage and brain-like computing technologies with the characteristics of fast speed, large capacity, and low energy consumption, in order to achieve stable data storage in the same unit and fast processing. Among them, phase change memory based on phase change material has the advantages of non-volatility and fast operation speed. Phase change memor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/257H10N70/8828H10N70/011
Inventor 张伟朱乐天孙苏阳王疆靖
Owner XI AN JIAOTONG UNIV
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