Doping modified phase change material and phase change storage unit containing same and preparation method thereof
A technology of phase-change memory and phase-change materials, which is applied in the field of micro-nano electronics, can solve problems such as failure to meet practical application requirements, poor chip data retention, and low crystallization temperature, and achieve the goal of overcoming poor data retention, low power consumption, The effect of low melting point
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Embodiment 1
[0033] The present invention contains (Sb 2 Se 3 ) 100-x Y x The preparation process of the phase change memory device unit of the phase change material is as follows:
[0034] Step 1: See figure 1, using sputtering, evaporation, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), metal compound vapor deposition (MOCVD), molecular beam epitaxy The lower electrode layer 100 is prepared by any one of (MBE), atomic vapor deposition (AVD) or atomic layer deposition (ALD). In this embodiment, the lower electrode layer 100 is preferably prepared by CVD. The material of the lower electrode layer 100 is one of the single metal materials W, Pt, Au, Ti, Al, Ag, Cu or Ni, or an alloy material composed of any two or more of the single metal materials, or The nitride or oxide of the single metal material is preferably W in this embodiment. The resulting W electrode had a diameter of 80 nm and a height of...
Embodiment 2
[0042] The same technical solution as in the first embodiment is adopted, except that the preparation method of the phase-change material layer 300 is changed to AVD or ALD, and the rest of the steps are exactly the same as in the first embodiment, and the same technical effect can also be achieved.
Embodiment 3
[0044] Adopt the same technical scheme as embodiment one or two, the difference is that the phase change material in embodiment one or two is changed into (Sb 2 Se 3 ) 92 N 8 . where for Sb 2 Se 3 The element for material doping is any one of C, N or O, preferably N here. The doping of N adopts the reactive magnetron sputtering method, and the process parameters are: the background pressure is 1×10 -5 Pa, the gas pressure during sputtering is 0.3Pa, Ar / N 2 The ratio of the gas flow rate is 25:1, the sputtering power is 500W, and the substrate temperature is 25°C.
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