Si-Sb-Te based sulfur group compound phase-change material for phase change memory

Abstract

The invention provides a Si-Sb-Te based sulfur group compound phase-change material for a phase change memory, belonging to the technical field of micro-electronics. The phase-change material has high heat stability and high crystallization velocity, and the component general formula is (SiaSbbTec)1-yMy, wherein a nitrogen element or an oxygen element or the mixture of the nitrogen element and the oxygen element; in SiaSbbTec, the content a of Si is 10-25% by atom, and the atom percent ratio of the content between Sb and Te is 1.7<=(b / c)<=2.0; and the content of the doped element M is 0-25% by atom. Under the electrical pulse effect, the material can be converted reversibly between the non-crystalline state (high impedance state) and the crystalline state (low impedance state), thus the information storage is realized; compared with the traditional Ge2Sb2Te5, the material has the advantages of high crystallization temperature, higher heat stability and better crystalline state resistivity; and with the phase-change material provided by the invention as the information memory medium, data retention capability of the memory can be effectively increased, rapid operation velocity can be maintained, the write operation power consumption can be lowered, and the reliability of the memory is improved.

Description

technical field [0001] The invention relates to a phase-change material used in a phase-change memory, in particular to a Si-Sb-Te-based chalcogenide phase-change material used in a phase-change memory. Background technique [0002] Memory occupies an important position in the semiconductor market, and phase change memory is considered to be the most potential next-generation non-volatile memory, which uses phase change thin film materials as storage media to realize information storage. Phase-change memory is a memory based on the Ovshinsky electronic effect proposed by S.R.Ovshinsky in the late 1960s (Ovshinsky S R. Reversible electrical switching phenomenon discovered structure. Phys. Rev. Lett., 1968, 21(20): 1450), the key materials of the phase change memory are the phase change film as the storage medium, the heating electrode material, the insulating material, and the extraction electrode material, etc. The basic principle of phase-change memory is to apply an elect...

AI Technical Summary

Problems solved by technology

[0004] By improving the structure of the phase-change memory cell device or the architecture of the driving circuit, the device's operating power consumption can be effectively reduced and the working speed can be increased. However, this will inevitably increase the complexity of the manufacturing process and reduce the uniformity of device characteristics.

Therefore, it has become an urgent problem for researchers in this technical field to provide a phase change thin film material with high thermal stability, low operating power consumption, fast crystallization speed, and long-term stable operation.

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