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Erasable rewriting phase change optical disk capable of being subjected to fluorescent read

A fluorescent and phase-change technology, applied in optical recording/reproduction, data recording, instruments, etc., to achieve fast writing and erasing speed, optimized performance, and improved readout-to-noise ratio

Active Publication Date: 2014-11-19
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

but with Ni 2+ On the contrary, most of the existing results are about the luminescence of Bi-doped glasses, and there are few reports about the luminescence of Bi in the crystalline phase.

Method used

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  • Erasable rewriting phase change optical disk capable of being subjected to fluorescent read
  • Erasable rewriting phase change optical disk capable of being subjected to fluorescent read
  • Erasable rewriting phase change optical disk capable of being subjected to fluorescent read

Examples

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Effect test

Embodiment 1

[0024] A lower protective layer, a Bi ion-doped fluorescent phase-change recording layer and an upper protective layer are sequentially prepared on a phase-change optical disc substrate by magnetron sputtering. The upper and lower protective layers use ZnS-SiO 2 The target is sputtered and the background vacuum is 3×10 -4 The pressure of Pa and Ar is 0.85Pa, the sputtering power is 140W, and the film thicknesses are 300nm and 100nm respectively. Using BiSb target and Sb 2 Te 3 Preparation of Bi Ion-doped Sb by Co-sputtering of -GeTe Alloy Target 2 Te 3 -GeTe fluorescent phase-change recording layer. The background vacuum is 3×10 -4 Pa, Ar pressure is 0.85Pa, the sputtering power of BiSb target is 2.1W, Sb 2 Te 3 - The sputtering power of the GeTe alloy target is 70W, and the film thickness is 100nm. Composition analysis shows that the atomic ratio of Bi ions in the film is 0.1 at.%.

Embodiment 2

[0026] A lower protective layer, a Bi ion-doped fluorescent phase-change recording layer and an upper protective layer are sequentially prepared on a phase-change optical disc substrate by magnetron sputtering. The upper and lower protective layers use ZnS-SiO 2 The target is sputtered and the background vacuum is 3×10 -4 The pressure of Pa and Ar is 0.85Pa, the sputtering power is 140W, and the film thicknesses are 300nm and 100nm respectively. Using BiSb target and Sb 2 Te 3 Preparation of Bi Ion-doped Sb by Co-sputtering of -GeTe Alloy Target 2 Te 3 -GeTe fluorescent phase-change recording layer. The background vacuum is 3×10 -4 Pa, Ar pressure is 0.85Pa, the sputtering power of BiSb target is 3W, Sb 2 Te 3 - The sputtering power of the GeTe alloy target is 70W, and the film thickness is 100nm. Composition analysis shows that the atomic ratio of Bi ions in the film is 1.50 at.%.

Embodiment 3

[0028] A lower protective layer, a Bi ion-doped fluorescent phase-change recording layer and an upper protective layer are sequentially prepared on a phase-change optical disc substrate by magnetron sputtering. The upper and lower protective layers use ZnS-SiO 2 The target is sputtered and the background vacuum is 3×10 -4 The pressure of Pa and Ar is 0.85Pa, the sputtering power is 140W, and the film thicknesses are 300nm and 100nm respectively. Using BiSb target and Sb 2 Te 3 Preparation of Bi Ion-doped Sb by Co-sputtering of -GeTe Alloy Target 2 Te 3 -GeTe fluorescent phase-change recording layer. The background vacuum is 3×10 -4 Pa, Ar pressure is 0.85Pa, the sputtering power of BiSb target is 3.5W, Sb 2 Te 3 - The sputtering power of the GeTe alloy target is 70W, and the film thickness is 100nm. Composition analysis shows that the atomic ratio of Bi ions in the film is 2.0 at.%.

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Abstract

An erasable rewriting phase change optical disk capable of being subjected to fluorescent read comprises an upper protective layer, a recording layer, a lower protective layer and a disk base, and is characterized in that the recording layer is a fluorescent phase change recording layer; the fluorescent phase change recording layer is formed by mixing an Sb2Te3-GeTe film into BiSb of which the thickness is 10-200 nm or mixing the Sb2Te3-GeTe film into NiO of which the thickness is 10-200 nm. The optical disk reserves the characteristics of quick writing and erasing speed, strong data retentivity and high cycling stability of the conventional phase change optical disk, and meanwhile the signal-to-noise ratio of reading is greatly improved. The reading is not reflective reading, no extra metal reflecting layer is needed, and the structure of the film is simpler as compared with the conventional phase change optical disk.

Description

technical field [0001] The invention relates to an erasable and rewritable phase-change optical disc, in particular to an erasable and rewritable phase-change optical disc read out by fluorescence. Background technique [0002] The erasable and rewritable optical disk is a kind of optical disk that can realize data erasing and rewriting, and the commercialized erasable and rewritable optical disk mainly includes magneto-optical optical disk and phase change optical disk. Organic erasable and rewritable optical discs based on photochromic recording materials have not been put into practical use. [0003] The readout method of the erasable and rewritable magneto-optical disc is based on the magneto-optical Kerr effect, which is read by detecting the change of the polarization azimuth angle of the reflected light relative to the incident light, because the detected variable is small (the Kerr angle at a short wavelength is generally less than 2 degrees), it needs to be used in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B7/2433G11B7/2548G11B7/2578G11B7/2534
Inventor 王阳张科林金成吴谊群
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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