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Nanocomposite phase-change material, preparation method and application thereof in phase-change memory

A phase change memory and phase change material technology, applied in nanotechnology, nanotechnology, metal material coating process, etc., can solve the problems of low carrier mobility, high threshold voltage, small dielectric constant, etc.

Active Publication Date: 2011-08-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

At present, in the research of phase change materials, SiO has been reported 2 with Ge 2 Sb 2 Te 5 composite of phase change materials, but due to the SiO 2 Smaller dielectric constant and lower carrier mobility of the composite, SiO 2 with Ge 2 Sb 2 Te 5 Composite phase change materials have higher threshold voltages

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Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] The nanocomposite phase change material of the invention is composed of phase change material GeTe with a molar percentage of 70-99% and a dielectric material with a molar percentage of 1-30%. The dielectric material is HfO 2 , SiO 2 、TiO 2 、Si 3 N 4 or Ta 2 o 5 One or two or more of the above-mentioned dielectric materials are co-doped. For example, select the dielectric material as HfO 2 , wherein, in the nanocomposite phase change material, the phase change material GeTe and the dielectric material are uniformly dispersed in the composite material, and the phase change material GeTe is in the form of nanoscale particles with a maximum diameter of less than 100 nanometers. The preparation method of the nanocomposite phase change material can be prepared by semiconductor deposition process, such as any one of sputtering method, chemical vapor depositi...

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Abstract

The invention relates to a nanocomposite phase-change material, a preparation method and an application thereof in a phase-change memory, wherein the nanocomposite phase-change material comprises a phase-change material GeTe with a molar percentage of 70-99% and a medium material HfO2 with a molar percentage of 1-30%. The phase-change material GeTe and the medium material HfO2 are uniformly compounded in a nanoscale, so that the crystallization of the phase-change material is suppressed, the thermal stability of the material is enhanced and the data keeping capacity of the material is improved on one hand, and the valid programming volume is reduced due to the participation of the medium material so as to reduce the volume change before and after the crystallization of phase-change unit and decrease the RESET current on the other hand; therefore, the operation stability and the realization of low power consumption of storage apparatus are promoted. In a word, the novel nanocomposite phase-change material is applied to a memory, and is capable of decreasing the RESET voltage of a phase-change storage apparatus and reducing the programming volume, which is beneficial to realizing high-density storage, increasing the heating efficiency of the phase-change memory during programming process, decreasing the power consumption, enhancing data keeping capacity, and the like.

Description

technical field [0001] The present invention relates to a nano-composite phase-change material based on germanium telluride, a preparation method, and an application as a phase-change memory, in particular to a phase-change material composed of GeTe and HfO 2 Formed nanocomposite phase change materials and their use in phase change memories. Background technique [0002] In recent years, phase-change memory (PCM), which has the potential to be the next generation of nonvolatile memory, has attracted extensive attention from both academia and industry. Compared with various existing semiconductor storage technologies, PCM has the advantages of small cell size, strong data retention, long cycle life, low power consumption, multi-level storage, high-speed reading, high and low temperature resistance (-55-125°C ), anti-radiation, and simple manufacturing process (can be matched with the existing integrated circuit process) and many other advantages. It uses the Joule heat gene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/34B82Y10/00B82Y40/00
Inventor 吕业刚宋三年宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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