Thin film material for phase change memory and preparation method thereof

Abstract

The invention provides a thin film material for a phase change memory and a preparation method thereof. The thin film material is a material composed of three elements, namely copper, stibium and tellurium, and a general formula of the material is CuxSbyTez, in which x is greater than 0 and less than or equal to 40, y is greater than or equal to 15 and less than or equal to 85, and z is greater than or equal to 15 and less than or equal to 85. According to the material provided by the invention, different crystallization temperatures, melting points and crystallization rates can be obtained by adjusting contents of the three elements in the material, so that the element ratio of the copper to the stibium to the tellurium is properly adjusted to obtain a higher crystallization temperature, a better thermal stability, a lower melting point and a higher crystallization rate compared with the traditional Ge2Sb2Te5(GST). Moreover, copper interconnection is a mainstream interconnection technology in the current oversized-scale integrated circuit, and the processing technology of the Cu element becomes more mature through the extensive use of the interconnection technology, and therefore, the Cu-Sb-Te phase change material provided by the invention is easy to process and has good compatibility with a COMS (Complementary Metal Oxide Semiconductor).

Description

technical field [0001] The invention relates to a phase change thin film material and a preparation method thereof in the field of microelectronic technology, in particular to a thin film material used for a phase change memory and a preparation method thereof. Background technique [0002] Phase change memory (Phase Change Memory, PCM) is a non-volatile semiconductor memory emerging in recent years. Compared with a variety of existing semiconductor storage technologies, it has the advantages of shrinkable device size (nanoscale), high-speed reading, low power consumption, high density, and simple manufacturing process. Widely optimistic about a strong competitor, it is expected to replace flash memory (Flash technology) to become the mainstream storage technology of the next generation of non-volatile memory, so it has a broad market prospect. [0003] The phase-change memory uses Joule heat generated by electric pulses to cause the phase-change memory material to undergo ...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a thin film material for phase change memory and its preparation method, which is used to solve the thermal stability and data problems shown by phase change memory materials in the prior art. Problems of poor holding capacity and slow phase transition

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