Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof

A phase-change memory and phase-change storage technology, applied in the field of phase-change storage materials and their preparation, can solve the problems of easy diffusion of phase-change storage materials, poor thermal stability of phase-change storage, and weak data retention performance, so as to reduce heat loss , Reduce device power consumption and improve heating efficiency

Active Publication Date: 2012-07-04
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a phase-change storage material and its preparation method, a storage device with a phase-change storage material and its preparation method, which are used to solve the problem that the phase-change storage material c

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof
  • Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof
  • Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The inventors of the present invention found that in the existing phase-change memory, the phase-change memory material of germanium-antimony-tellurium ternary system is widely used, and the phase-change memory material has low crystallization temperature, complicated processing, and Among them, the tellurium element is easy to diffuse and cause problems such as pollution to the human body or the environment.

[0042] Therefore, the inventors of the present invention have improved the prior art and proposed a novel phase-change memory material, which is a gallium-antimony binary system that does not contain tellurium, an easily polluting element, and has a simple structure. It has strong processability, good thermal stability, adjustable physical properties, and is friendly to the environment.

[0043] Accordingly, the method also provides a method for preparing the above-mentioned phase-change memory material, a phase-change memory using the above-mentioned phase-chang...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a phase-change storage material and a preparation method of the phase-change storage material as well as a storage device provided with the phase-change storage material and a preparation method of the storage device, wherein the phase-change storage material is a Ga-Sb compound with the stoichiometry of GaxSb100-x, and x is more than 0 and less than 50. Compared with the prior art, the phase-change storage material is simple in structure, strong in processability and free from easy-pollution elements; and the phase-change storage device made from the phase-change storage material has the advantages of being rapid in phase-change speed, low in power consumption, strong in data retention, stable in electrical property and the like.

Description

technical field [0001] The invention relates to a phase-change storage material and a preparation method thereof, as well as a memory with the phase-change storage material and a preparation method thereof. Background technique [0002] Phase change memory (PC-RAM) is a kind of non-volatile semiconductor memory that has emerged in recent years. Compared with a variety of semiconductor storage technologies currently available, it has low power consumption, high density, radiation resistance, non-volatility, high-speed reading, and long cycle life (>10 13 times), device size shrinkability (nanoscale), high and low temperature resistance (-55°C to 125°C), anti-vibration, anti-electronic interference and simple manufacturing process (can be matched with existing integrated circuit technology), etc., It is the most powerful competitor in the next-generation memory, which is widely favored by the industry, and has a broad market prospect. [0003] Phase change memory (PC-RAM)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00C22C12/00
Inventor 吕业刚宋三年宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap