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A kind of ge-sb-te-se film material for phase change memory and its preparation method

A phase-change memory and thin-film material technology, applied in the direction of electrical components, etc., can solve the problems of low thermal stability, high melting point, and excessive RESET current in the amorphous state, and achieve the effects of simple manufacturing process, long cycle life, and improved performance

Active Publication Date: 2017-08-25
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ge 2 Sb 2 Te 5 The low thermal stability of the amorphous state severely limits its application range
Secondly, the resistance of crystalline GST material is low, and the material has a high melting point (about 620°C), which makes the RESET current of the corresponding device too large, which brings serious power consumption problems

Method used

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  • A kind of ge-sb-te-se film material for phase change memory and its preparation method
  • A kind of ge-sb-te-se film material for phase change memory and its preparation method
  • A kind of ge-sb-te-se film material for phase change memory and its preparation method

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Effect test

Embodiment 1

[0028] A Ge-Sb-Te-Se thin film material for phase change memory, which is a material composed of germanium-antimony-tellurium-selenium four elements, wherein antimony and tellurium can form Sb-Sb and Sb- Te stable phase, the two phases composite at the nanoscale, can be composed similarly to GeTe and Sb 2 Te 3 pseudo-binary system.

Embodiment 2

[0030] A kind of Ge-Sb-Te-Se film material for phase change memory, the chemical structural formula of this film material is (Sb 2 Se) x(Ge 2 Sb 2 Te 5 ) y , where Sb 2 The overall molar percentage of Se is 0%2 Sb 2 Te 5 The overall molar percentage is 16%≤y%≤95%, x+y=100, which specifically includes the following steps:

[0031] (1) In the magnetron sputtering coating system, Sb 2 Se targets and Ge 2 Sb 2 Te 5 The targets are respectively installed in the magnetron radio frequency sputtering target, and the semiconductor is used as the substrate;

[0032] (2) Vacuumize the sputtering chamber of the magnetron sputtering coating system until the vacuum degree in the chamber reaches 1.6×10 -4 Pa, and then feed high-purity argon into the sputtering chamber until the pressure in the sputtering chamber reaches 0.3 Pa for the initiation pressure required for sputtering;

[0033] (3) Then control the power of the RF power supply on the Sb2Se target to 3-13W, and the Ge ...

Embodiment 3

[0035] With above-mentioned embodiment 2, its difference is: in the preparation process alloy Sb 2 The sputtering power of the Se target was controlled to 0W, and the Ge 2 Sb 2 Te 5 The sputtering power of the target is controlled to 40W, and Ge 2 Sb 2 Te 5 Phase change memory thin film material.

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Abstract

The invention discloses a Ge-Sb-Te-Se film material for a phase change random access memory and a preparation method of the material. The material is characterized by consisting of germanium, stibium, tellurium and selenium elements; a general formula of the material is (Sb2Se)x(Ge2Sb2Te5)y; the mole percentage x of Sb2Se is greater than 0% and less than or equal to 84%; the mole percentage y of GST is greater than or equal to 16% and less than or equal to 95%; and x+y is equal to 100. The method comprises the following concrete steps of controlling the vacuum degree of a magnetron sputtering coating system to be 0-1.6*10<-4>Pa, controlling luminance build-up air pressure required by sputtering to be 0.3Pa, controlling the power of a radio-frequency power supply on an Sb2Se target to be 3-13W, controlling the power of a radio-frequency power supply on a GST target to be 5-50W, controlling the sputtering time to be 10-60min, and performing deposition to obtain the Ge-Sb-Te-Se film material. The material has the advantages of good heat stability, high data retention and high phase change speed.

Description

technical field [0001] The invention relates to a phase-change memory material, in particular to a Ge-Sb-Te-Se film material used for a phase-change memory and a preparation method thereof. Background technique [0002] Phase change memory (PCRAM) has the advantages of long cycle life, low power consumption, multi-level storage, high-speed reading, radiation resistance, and simple manufacturing process. In particular, the device size can be reduced to below the 10nm technology node. The technology is unmatched. PCRAM is considered by the International Semiconductor Industry Association to be the most likely to replace Flash and become the mainstream memory product in the future, with broad market prospects. [0003] The basic principle of phase change memory is to use the Joule heat generated by electric pulses or light pulses to make phase change memory materials produce reversible transitions between amorphous and crystalline states. The difference in resistance between ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00C22C12/00
Inventor 龚丽萍吕业刚孙景阳王东明汪伊曼沈祥王国祥戴世勋
Owner NINGBO UNIV
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