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Al-sc-sb-te phase change material, phase change memory unit and preparation method thereof

An al-sc-sb-te, phase-change memory technology, applied in the field of microelectronics, can solve the problems of slow phase change, poor thermal stability and data retention, and achieve strong data retention, convenient material composition, The effect of fast erasing and writing

Active Publication Date: 2022-05-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an Al-Sc-Sb-Te phase change material, a phase change memory cell and a preparation method thereof, which are used to solve the problem of the performance of the phase change memory material in the prior art. The problems of poor thermal stability and data retention, and slow phase transition

Method used

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  • Al-sc-sb-te phase change material, phase change memory unit and preparation method thereof
  • Al-sc-sb-te phase change material, phase change memory unit and preparation method thereof
  • Al-sc-sb-te phase change material, phase change memory unit and preparation method thereof

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Embodiment 1

[0039] This embodiment provides an Al-Sc-Sb-Te phase change material, the Al-Sc-Sb-Te phase change material includes aluminum, scandium, antimony, tellurium four elements, the Al-Sc-Sb-Te The general chemical formula of phase change materials is (AlSc 2 ) x (Sb 2 Te) y , where 0<x≤1, 0<y≤1, and x+y=1.

[0040] As an example, the chemical formula of Al-Sc-Sb-Te phase change material (AlSc 2 ) x (Sb 2 Te) yAmong them, 0.11≤x≤0.19, 0.81≤y≤0.89. In more detail, the general formula of the phase change material (AlSc 2 ) x (Sb 2 Te) y The specific components in can be (AlSc 2 ) 0.11 (Sb 2 Te) 0.89 , (AlSc 2 ) 0.15 (Sb 2 Te) 0.85 , (AlSc 2 ) 0.17 (Sb 2 Te) 0.83 and (AlSc 2 ) 0.19 (Sb 2 Te) 0.81 , with an error range of 0.6 mol%. The material system can obtain different crystallization temperature, resistivity and crystallization activation energy by adjusting the ratio between elements.

[0041] As an example, the Al-Sc-Sb-Te phase change material can rea...

Embodiment 2

[0048] This embodiment provides a phase change memory cell, the phase change memory cell at least includes a lower electrode layer, an upper electrode layer, and a phase change material layer between the lower electrode layer and the upper electrode layer, the phase change The change material layer includes the Al-Sc-Sb-Te phase change material provided in Embodiment 1, that is, the Al-Sc-Sb-Te phase change material includes four elements of aluminum, scandium, antimony and tellurium, and the Al The general chemical formula of -Sc-Sb-Te phase change material is (AlSc 2 ) x (Sb 2 Te) y , where 0<x≤1, 0<y≤1, and x+y=1.

[0049] It should be noted that the Al-Sc-Sb-Te phase-change thin film material in Example 1 can be used in phase-change memory cells with vertical structures, such as image 3 As shown, the phase-change memory cell 1 includes a lower electrode layer 11 , an Al-Sc-Sb-Te phase-change material layer 12 provided by the present invention, a transition layer 13 , ...

Embodiment 3

[0054] The present invention also provides a method for preparing an Al-Sc-Sb-Te phase-change memory unit, which can prepare the phase-change memory unit in Example 2, and the preparation method at least includes:

[0055] 1) preparing the lower electrode layer;

[0056] 2) preparing a phase-change material layer on the lower electrode layer, the phase-change material layer comprising the Al-Sc-Sb-Te phase-change material described in Example 1;

[0057] 3) Prepare an upper electrode layer on the phase change material.

[0058] As an example, the lower electrode layer may be prepared using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), or the like. The material of the lower electrode layer includes: one of Al, Ti, W, graphite, TiN, Cu, and TiW. In this embodiment, the material of the lower electrode layer 11 is preferably W.

[0059] As an example, the Al-Sc-Sb-Te phase change...

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Abstract

The present invention provides an al‑sc‑sb‑te phase transformation material, phase -changing memory unit and its preparation method.The chemical general formula of Al‑sc‑sb‑Te phase transformer material is (ALSC 2 Cure x Sb 2 TE) y Among them, 0 <x ≤ 1, 0 <y ≤ 1, and x+y = 1.This material can obtain storage materials with different crystalline temperatures, resistors and crystallization activity by adjusting the content of the four elements in the material. Proper adjustment (ALSC 2 Cure x Sb 2 TE) y The proportion of Chinese elements can then obtain a phase -changing material with better thermal stability, stronger data maintenance, and faster crystallization speed.The present invention (ALSC 2 Cure x Sb 2 TE) y The preparation method of phase -changing materials is simple, which is convenient for accurate control of material ingredients.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a phase change film material and a preparation method thereof, in particular to an Al-Sc-Sb-Te phase change material, a phase change memory unit and a preparation method thereof. Background technique [0002] Phase change memory (Phase Change Memory, PCM) is a non-volatile semiconductor memory emerging in recent years. Compared with a variety of existing semiconductor storage technologies, it has the advantages of shrinkable device size (nanoscale), high-speed reading, low power consumption, high density, and simple manufacturing process. Widely optimistic about a strong competitor, it is expected to replace flash memory (Flash technology) to become the mainstream storage technology of the next generation of non-volatile memory, so it has a broad market prospect. [0003] The phase-change memory uses Joule heat generated by electric pulses to cause the phase-change memory...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/8828H10N70/011
Inventor 章思帆吴良才刘广宇宋志棠宋三年
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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