Cr-Sb phase change storage material and preparation and application thereof

Abstract

The invention belongs to the technical field of microelectronics, and discloses a Cr-Sb phase change storage material and preparation and application thereof. The general formula of the chemical composition of the Cr-Sb phase change storage material is CriSbj, i and j respectively correspond to atomic percentages of Cr atoms and Sb atoms in the Cr-Sb phase change storage material, i is greater than or equal to 5 but less than or equal to 30, j is greater than or equal to 70 but less than or equal to 95, and i + j is equal to 100. Cr is doped into single crystal Sb, the Cr-Sb phase change storage material with the chemical composition general formula of CriSbj is obtained, the chemical combination of Cr and Sb brings a series of material property changes, and thus, the binary Cr-Sb phase change storage material with thermal stability and abnormal optical properties is realized, the amorphous stability can be improved, the crystallization temperature of the phase change material is increased, the thermal stability of the phase change storage material is thus improved, and the Cr-Sb phase change storage material is particularly suitable for being applied to a phase change memory, an artificial neural network or an inhibitory synaptic device.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a Cr-Sb phase-change storage material and its preparation and application. Background technique

[0002] Phase change storage is based on phase change storage materials (mostly chalcogenides) between the amorphous state (low refractive index, high resistance state "1") and crystalline state (high refractive index, low resistance state "0") Reversible and rapid transition to achieve data storage and erasing, and this transition is non-volatile, that is, no additional energy is required to maintain the current state. The data is then read out by measuring changes in the material's electrical resistance or refractive index. Generally speaking, phase-change memory materials have at least two states with different structures, that is, an amorphous state and one (or more) crystalline states, and due to the huge structural difference, the two-state materials ha...

Examples

Embodiment 1

[0035] The general formula of the chemical composition of the nano-Cr-Sb phase-change film material used for phase-change memory prepared in this embodiment is Cr 10 Sb 90 .

[0036] The Cr-Sb nano film material is prepared by magnetron sputtering; during the preparation, high-purity argon is introduced as the sputtering gas, the sputtering pressure is 0.5 Pa, and the background vacuum is required to be 10 -4 Below Pa; the sputtering target is Cr 10 Sb 90 The alloy target is sputtered by a DC source, the sputtering power is 32W, and the target base distance is set to 120mm. Concrete preparation method comprises the following steps:

[0037] (1) Select SiO with a size of 1cm*1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities. Specifically, the following steps may be included:

[0038] (1-1) Cut out 1cm*1cm of SiO with a silicon wafer knife 2 / Si (100) substrate, used as the substrate for sputtering;

[0039] (1...

Embodiment 2

[0054] The general formula of the chemical composition of the nano-Cr-Sb phase-change film material used for phase-change memory prepared in this embodiment is Cr 5 Sb 95 .

[0055]The Cr-Sb nano film material is prepared by magnetron sputtering; during the preparation, high-purity argon is introduced as the sputtering gas, the sputtering pressure is 0.5 Pa, and the background vacuum is required to be 10 -4 Below Pa; the sputtering target is Cr 5 Sb 95 The alloy target is sputtered by a DC source, the sputtering power is 32W, and the target base distance is set to 120mm. Concrete preparation method comprises the following steps:

[0056] (1) Select SiO with a size of 1cm*1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities. Specifically, the following steps may be included:

[0057] (1-1) Cut out 1cm*1cm of SiO with a silicon wafer knife 2 / Si (100) substrate, used as the substrate for sputtering;

[0058] (1-2)...

Embodiment 3

[0070] The general formula of the chemical composition of the nano-Cr-Sb phase-change film material used for phase-change memory prepared in this embodiment is Cr 30 Sb 70 .

[0071] The Cr-Sb nano film material is prepared by magnetron sputtering; during the preparation, high-purity argon is introduced as the sputtering gas, the sputtering pressure is 0.5 Pa, and the background vacuum is required to be 10 -4 Below Pa; the sputtering target is Cr 30 Sb 70 The alloy target is sputtered by a DC source, the sputtering power is 32W, and the target base distance is set to 120mm. Concrete preparation method comprises the following steps:

[0072] (1) Select SiO with a size of 1cm*1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities. Specifically, the following steps may be included:

[0073] (1-1) Cut out 1cm*1cm of SiO with a silicon wafer knife 2 / Si (100) substrate, used as the substrate for sputtering;

[0074] (1...

technical field

[0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a Cr-Sb phase-change storage material and its preparation and application. Background technique

[0002] Phase change storage is based on phase change storage materials (mostly chalcogenides) between the amorphous state (low refractive index, high resistance state "1") and crystalline state (high refractive index, low resistance state "0") Reversible and rapid transition to achieve data storage and erasing, and this transition is non-volatile, that is, no additional energy is required to maintain the current state. The data is then read out by measuring changes in the material's electrical resistance or refractive index. Generally speaking, phase-change memory materials have at least two states with different structures, that is, an amorphous state and one (or more) crystalline states, and due to the huge structural difference, the two-state materials ha...

Examples

Embodiment 1

[0035] The general formula of the chemical composition of the nano-Cr-Sb phase-change film material used for phase-change memory prepared in this embodiment is Cr 10 Sb 90 .

[0036] The Cr-Sb nano film material is prepared by magnetron sputtering; during the preparation, high-purity argon is introduced as the sputtering gas, the sputtering pressure is 0.5 Pa, and the background vacuum is required to be 10 -4 Below Pa; the sputtering target is Cr 10 Sb 90 The alloy target is sputtered by a DC source, the sputtering power is 32W, and the target base distance is set to 120mm. Concrete preparation method comprises the following steps:

[0037] (1) Select SiO with a size of 1cm*1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities. Specifically, the following steps may be included:

[0038] (1-1) Cut out 1cm*1cm of SiO with a silicon wafer knife 2 / Si (100) substrate, used as the substrate for sputtering;

[0039] (1...

Embodiment 2

[0054] The general formula of the chemical composition of the nano-Cr-Sb phase-change film material used for phase-change memory prepared in this embodiment is Cr 5 Sb 95 .

[0055]The Cr-Sb nano film material is prepared by magnetron sputtering; during the preparation, high-purity argon is introduced as the sputtering gas, the sputtering pressure is 0.5 Pa, and the background vacuum is required to be 10 -4 Below Pa; the sputtering target is Cr 5 Sb 95 The alloy target is sputtered by a DC source, the sputtering power is 32W, and the target base distance is set to 120mm. Concrete preparation method comprises the following steps:

[0056] (1) Select SiO with a size of 1cm*1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities. Specifically, the following steps may be included:

[0057] (1-1) Cut out 1cm*1cm of SiO with a silicon wafer knife 2 / Si (100) substrate, used as the substrate for sputtering;

[0058] (1-2)...

Embodiment 3

[0070] The general formula of the chemical composition of the nano-Cr-Sb phase-change film material used for phase-change memory prepared in this embodiment is Cr 30 Sb 70 .

[0071] The Cr-Sb nano film material is prepared by magnetron sputtering; during the preparation, high-purity argon is introduced as the sputtering gas, the sputtering pressure is 0.5 Pa, and the background vacuum is required to be 10 -4 Below Pa; the sputtering target is Cr 30 Sb 70 The alloy target is sputtered by a DC source, the sputtering power is 32W, and the target base distance is set to 120mm. Concrete preparation method comprises the following steps:

[0072] (1) Select SiO with a size of 1cm*1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities. Specifically, the following steps may be included:

[0073] (1-1) Cut out 1cm*1cm of SiO with a silicon wafer knife 2 / Si (100) substrate, used as the substrate for sputtering;

[0074] (1...

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