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A kind of SIO2/SB type superlattice nano-phase change film material and its preparation method and application

A thin-film material and superlattice technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the phase change process of phase change memory with limited operating speed, unable to meet information storage requirements, The crystallization speed needs to be improved to achieve the effects of shortening the crystallization time, inhibiting crystallization, and low power consumption

Active Publication Date: 2018-11-23
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ge 2 Sb 2 Te 5 It is a widely used phase-change memory material at present. Although its performance in all aspects is balanced and there are no major shortcomings, there are still many places to be improved and improved.
First of all, the operating speed of phase change memory is mainly limited by the phase change process of thin film materials, while Ge 2 Sb 2 Te 5 The crystallization mechanism of Ge is mainly based on nucleation, making its phase transition slow, unable to meet the information storage requirements of the future high-speed and big data era, and the crystallization speed needs to be improved; secondly, Ge 2 Sb 2 Te 5 The thermal stability of Ge is poor, the crystallization temperature is only about 160°C, and the data can only be kept for 10 years at an ambient temperature of 85°C, which cannot fully meet the requirements of future highly integrated semiconductor chips; finally, Ge 2 Sb 2 Te 5 Higher melting point and lower crystalline resistance make PCRAM require a larger drive current to complete the RESET operation, resulting in a larger RESET power consumption

Method used

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  • A kind of SIO2/SB type superlattice nano-phase change film material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: preparation [SiO 2 (1) / Sb(9)] 5 Superlattice-like nanophase-change thin film materials.

[0037] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0038] a) Strong ultrasonic cleaning in acetone solution for 3 to 5 minutes, then rinse with deionized water;

[0039] b) Strong ultrasonic cleaning in ethanol solution for 3 to 5 minutes, rinse with deionized water, and dry the surface and back with high-purity nitrogen;

[0040] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0041] 2. Preparation before preparing multi-layer composite film:

[0042] a) Install SiO separately 2 and Sb sputtering target, the atomic percent purity of the target reaches 99.999%, and the background vacuum is evacuated to 1×10 -4 Pa;

[0043] b) Set the sputtering power to 30W;

[0044] c) Using high-purity argon as the sputtering gas, the volume percent purity reaches 99.999%, setting the arg...

Embodiment 2

[0051] Embodiment 2: preparation [SiO 2 (2) / Sb(8)] 5 Superlattice-like nanophase-change thin film materials.

[0052] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0053] a) Strong ultrasonic cleaning in acetone solution for 3 to 5 minutes, then rinse with deionized water;

[0054] b) Strong ultrasonic cleaning in ethanol solution for 3 to 5 minutes, rinse with deionized water, and dry the surface and back with high-purity nitrogen;

[0055] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0056] 2. Preparation before preparing multi-layer composite film:

[0057] a) Install SiO separately 2 and Sb sputtering target, the atomic percent purity of the target reaches 99.999%, and the background vacuum is evacuated to 1×10 -4 Pa;

[0058] b) Set the sputtering power to 30W;

[0059] c) Using high-purity argon as the sputtering gas, the volume percent purity reaches 99.999%, setting the arg...

Embodiment 3

[0066] Embodiment 3: preparation [SiO 2 (3) / Sb(7)] 5 Superlattice-like nanophase-change thin film materials.

[0067] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0068] a) Strong ultrasonic cleaning in acetone solution for 3 to 5 minutes, then rinse with deionized water;

[0069] b) Strong ultrasonic cleaning in ethanol solution for 3 to 5 minutes, rinse with deionized water, and dry the surface and back with high-purity nitrogen;

[0070] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0071] 2. Preparation before preparing multi-layer composite film:

[0072] a) Install SiO separately 2 and Sb sputtering target, the atomic percent purity of the target reaches 99.999%, and the background vacuum is evacuated to 1×10 -4 Pa;

[0073] b) Set the sputtering power to 30W;

[0074] c) Using high-purity argon as the sputtering gas, the volume percent purity reaches 99.999%, setting the arg...

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Abstract

The invention relates to the technical field of nanomaterials, and relates to a SiO2 / Sb type superlattice nanometer phase change thin film material and a preparation method and application thereof. The material of the present invention includes a silicon dioxide thin film material and an elemental antimony thin film material, and the two are alternately superimposed on a nanometer scale by a magnetron sputtering method. The general structural formula of the material of the present invention is [SiO2(a) / Sb(b)]x, wherein: a represents the thickness (nm) of the single-layer SiO2 film, and 1≤a≤9; b represents the thickness of the single-layer Sb film Thickness (nm), and 1≤b≤8; x represents the number of alternating periods of the single-layer SiO2 film and the single-layer Sb film, and x is any positive integer. The SiO2 / Sb type superlattice nano-phase change thin film material of the invention has faster phase change speed, better thermal stability and lower operation power consumption, and is suitable for preparing high-speed, high-stability and low-power consumption phases Variable memory has great market prospects.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a SiO 2 / Sb-like superlattice nano phase change thin film material and its preparation method and application. Background technique [0002] Phase-Change Random Access Memory (Phase-Change Random Access Memory, abbreviated as PCRAM) utilizes the huge resistance difference between the crystalline state and the amorphous state of the phase-change material to realize information storage. Phase change materials have higher resistivity in the amorphous state and lower resistivity in the crystalline state, and the difference in resistance between the two states can reach more than two orders of magnitude. The rapid transition of phase-change materials between two resistive states can be achieved through current-induced Joule heating. PCRAM has a long cycle life (>10 13 Times), small component size, high storage density, fast reading speed, good stability, anti-vibration, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00B82Y30/00
CPCB82Y30/00H10N70/881H10N70/883H10N70/026
Inventor 朱小芹胡益丰翟良君陈奥陈雅蓉薛建忠邹华孙月梅袁丽吴卫华张建豪
Owner JIANGSU UNIV OF TECH
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