PCM (phase-change material), phase change memory made of PCM and production method of phase change memory

Abstract

The invention provides PCM. The PCM is a compound with component general formula of Cr<x>Sb<y>Te<1>. As atomic ratios of elements, x is larger than 0 and smaller than 1, and y is no smaller than 0 and no larger than 3.5. The invention further provides a phase change memory made of the PCM and a production method of the phase change memory. According to the arrangement, Cr-Sb-Te sulfur-based compound phase change material provided allows reversible transformation between high resistance state and low resistance state under action of external energy; as the Cr-Sb-Te sulfur-based compound phase change material serves as memory medium of the phase-change memory, a phase-change memory unit is high in phase change speed, low in write operation current and the like, and high-temperature data retention and reliability of a device are improved. Aims to memory principle and characteristics of the phase-change memory, a phase-change memory unit structure based on the novel phase change material Cr<x>Sb<y>Te<1> is further provided, allowing the phase-change memory comprising the Cr<x>Sb<y>Te<1> phase change material is high in speed, low in consumption, high in data retention and the like.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a phase change material, a phase change memory made of the phase change material and a preparation method. Background technique [0002] In the semiconductor market, memory occupies an important position. Phase change memory using phase change thin film material as storage medium is considered to be the most potential next-generation non-volatile memory. Phase-change memory technology is based on the Ovshinsky electronic effect memory proposed by S.R.Ovshinsky in the late 1960s and early 1970s. Its key materials include phase-change films as storage media, heating electrode materials, insulating materials and lead-out electrodes. materials etc. The basic principle of phase change memory is: apply electrical pulse signal to the device unit, make the phase change material produce reversible transition between the amorphous state and the crystalline state, use the materia...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a phase change material, a phase change memory made of the phase change material and a preparation method, which are used to solve the problem of the low crystallization temperature of the phase change material in the prior art. , poor high temperature data retention, slow crystallization speed, high power consumption and slow erasing and writing speeds in phase change memory devices

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