Si-Te-Sb series phase-change thin film material for phase-change memory

Abstract

The invention provides a Si-Te-Sb series phase change film material for a phase change memory, which belongs to microelectronics field. At present, Ge2Te5Sb2 material has lower crystallization temperature (about 165 DEG G) and faces to a danger of data loss. The Si-Te-Sb memory material for the phase change memory has a general formula as follows: SiaTebSb100-(a+b), therein, 20<=a<=b, 20<=b<48. The material has higher crystallization temperature, better thermal stability and more stronger data keeping ability, at the same time, has even crystal phase structure and nanometer-sized grain size, and has better reversible phase change ability, at the same time, improves fatigue property.

Description

technical field [0001] The invention relates to a storage material used in a phase-change memory in the field of microelectronic technology, in particular to a phase-change thin film material composed of a mixture of silicon-tellurium-antimony. Background technique [0002] Phase-change memory is a kind of memory that uses phase-change thin film material as a storage medium to realize data storage. It has broad application prospects and is a hot spot in memory research at present. Because most of the phase-change thin film materials used contain chalcogen elements, it is also called chalcogenide random access memory, which is based on the Ovshinsky electronic effect memory (Ovshinsky S R. Reversible electrical memory) proposed by S. R. Ovshinsky in the late 1960s. switching phenomenon discovered structure. Phys Rev Lett, 1968, 21(20): 1450), is considered to be the most promising next-generation high-speed, high-density, low-power memory. The storage of chalcogenide random ...

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Problems solved by technology

Although based on Ge 2 Te 5 Sb 2 The memory data can be kept at room temperature for ten years, but due to the low crystallization temperature of the material (about 165 degrees), it still faces the risk of data loss, so increasing the crystallization temperature can improve the data retention ability of phase change memory and improve the phase change memory. The thermal stability of variable materials has become an urgent problem to be solved at present.

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