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Phase transition storage material and preparation method thereof

A phase-change storage and thin-film preparation technology, applied in the field of phase-change storage materials and their preparation, can solve the problems of poor thermal stability and data retention, slow phase-change speed, environmental pollution, etc., and achieve stable composition shortening and fast crystallization. Speed, simple process effect

Active Publication Date: 2015-07-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention can solve the problems of poor thermal stability and data retention ability, slow phase change speed, high power consumption and environmental pollution exhibited by phase change storage materials in the prior art

Method used

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  • Phase transition storage material and preparation method thereof
  • Phase transition storage material and preparation method thereof
  • Phase transition storage material and preparation method thereof

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Embodiment 1

[0031] see figure 1 , a phase-change memory cell with a vertical structure, the phase-change memory cell includes a lower electrode 1, a phase-change memory material layer 2 on the lower electrode 1, a transition layer 3 on the phase-change memory material layer 2, and a transition layer 3 on the transition The upper electrode 4 on the layer 3; the lower electrode 1 is surrounded by an insulating medium 5.

[0032] The phase-change storage material layer 2 is a phase-change thin film material, which is selected from the gallium-antimony-selenium (Ga-Sb-Se) compound provided by the present invention. As a storage medium, it is the core of the phase change memory unit. Wherein, the lower electrode 1 and the upper electrode 4 can be selected from Al, Ti, W, graphite, TiN, Cu, TiW or other conductive materials. The transition layer 3 can be TiN or TaN, and its thickness is about 10-30 nanometers. Preferably 20 nm. The insulating layer 5 can be SiO 2 or Si 3 N 4 Material.

...

Embodiment 2

[0036] Phase-change storage material gallium-antimony-selenium (Ga-Sb-Se) compound provided by the invention, its chemical composition is Ga x Sb y Se z , wherein 4<x<40, 25<y<85, 5<z<70, x+y+z=100.

[0037] When it is used in a phase-change memory unit with a vertical structure, the lower electrode 1 and the upper electrode 4 can be made of Al, Ti, W, graphite, TiN, Cu, TiW or other conductive materials. The transition layer 3 can be TiN or TaN, and its thickness is about 10-30 nanometers. Preferably 20 nm. The insulating layer 5 can be SiO 2 or Si 3 N 4 Material.

[0038] The phase-change storage material Ga-Sb-Se described in the present invention can be prepared by multi-target co-sputtering. Using GaSb alloy target and Sb 2 Se 3 (or Sb x Se, 1-4 Pascal, the sputtering pressure is 0.18 Pascal to 0.25 Pascal, the sputtering gas is argon, the temperature is room temperature, the RF power applied to the GaSb alloy target is 10 watts to 45 watts, applied to the Sb ...

Embodiment 3

[0040] Preferably, the phase change storage material gallium-antimony-selenium (Ga-Sb-Se) compound provided by the present invention has a chemical composition of Gax Sb y Se z , wherein, 10≤x≤20, 50≤y≤85, 20≤z≤40, x+y+z=100.

[0041] The present invention also includes a preparation method of a phase-change memory material, the preparation method comprising any one of the following methods: (1) using a GaSb alloy target and a Sb x Magnetron co-sputtering of two Se alloy targets, where 12 Se 3 Co-sputtering with Sb three-target magnetron.

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Abstract

The invention relates to a phase transition material and a preparation method thereof, wherein the phase transition storage material is a gallium-antimony-selenium compound. The chemical component is Ga x SbySez, wherein 4 (*(40, 25 (y (85, 5 (z (70, x + y + z = 100. The gallium-antimony-selenium phase transition thin film material provided in the invention, compared to a common Ge2Sb2Te5 (GST) material, has a better heat stability, a faster phase transition speed and a lower melting point. Meanwhile, the gallium-antimony-selenium phase transition thin film material provided in the invention does not contain element Te, is friendly to environment, does not contaminate semiconductor equipment and brings conveniences for subsequent technology processing. The phase transition memory manufactured of the phase transition storage material possesses advantages such as strong data confining force, low power dissipation, fast operation speed, stable electrics performance and the like.

Description

technical field [0001] The invention provides a phase-change storage material and a preparation method thereof, in particular to a gallium-antimony-selenium phase-change thin-film storage material for phase-change storage. Background technique [0002] Phase change memory (PCM) is a non-volatile semiconductor memory that has emerged in recent years. Compared with a variety of existing semiconductor storage technologies, it has the advantages of shrinkable device size (nanoscale), high-speed reading, low power consumption, high density, and simple manufacturing process. Widely optimistic about a strong competitor, it is expected to replace flash memory (Flash technology) and become the mainstream storage technology of the next generation of non-volatile memory, so it has a broad market prospect. [0003] Phase-change memory uses Joule heat generated by electrical or optical pulses to make phase-change memory materials undergo reversible phase transitions between crystalline ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00C23C14/06C23C14/35
Inventor 吕业刚宋三年宋志棠刘波饶峰吴良才
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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