Self-heating phase-change storage unit and self-heating phase-change storage structure

Abstract

The invention provides a self-heating phase-change storage unit and a self-heating phase-change storage structure. The self-heating phase-change memory unit includes a self-heating electrode and a phase-change storage medium connected with the self-heating electrode; the self-heating electrode comprises at least one self-heating material layer; the phase-change storage medium comprises at least one layer phase-change storage material layer; the self-heating material layer and the phase-change storage material layer are made of different materials; and the self-heating material layer and the phase-change storage material layer each comprise at least one chalcogen element. The self-heating phase-change storage unit of the invention has fast data writing capability and a low-power consumptioncharacteristic; and thermal interference between adjacent self-heating phase-change storage units can be effectively avoided. The self-heating phase-change structure of the invention has the advantages of very high data writing speed, strong data retention capability, low power consumption, long service life and the like.

Description

technical field [0001] The invention relates to the field of semiconductor materials and semiconductor devices, in particular to a self-heating phase-change storage unit and a self-heating phase-change storage structure. Background technique [0002] Phase change memory (PCRAM) is a non-volatile memory device. Its basic principle is to use chalcogenide as the storage medium, and use electric energy (heat) to make the storage medium convert between crystalline state (low resistance) and amorphous state (high resistance) so as to realize the writing and erasing of information. Specifically, information is read by measuring the resistance of the storage medium and comparing whether it is a high resistance "1" or a low resistance "0". Since the phase change memory does not need to erase the previous code or data before writing the updated code, its speed has advantages over traditional NAND, and the read and write time is relatively balanced, and the phase change memory does no...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a self-heating phase-change memory unit and a self-heating phase-change memory structure, which are used to solve the problem of high power consumption of the phase-change memory in the prior art, adjacent Problems such as thermal interference are easily generated between the phase change memory cells

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