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Ta-Ge-Sb-Te phase change material, preparation method thereof and phase change memory unit

A ta-ge-sb-te, phase change memory technology, applied in the field of microelectronics, can solve the problems of inability to meet the speed requirements of dynamic random access memory, data retention cannot be guaranteed, and the crystallization temperature of phase change materials is low. The effect of strong adjustability, good data retention, and fast crystallization speed

Active Publication Date: 2020-07-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] This application is to solve Ge in the prior art 2 Sb 2 Te 5 The crystallization temperature of phase change materials is low, the thermal stability is not good, the data retention cannot be guaranteed, and there are technical problems such as data loss, low phase change speed and the inability to meet the speed requirements of DRAM

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  • Ta-Ge-Sb-Te phase change material, preparation method thereof and phase change memory unit

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[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0027] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "top", and "bottom" are based on the orientations or positional relationships shown in the drawing...

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Abstract

The invention provides a Ta-Ge-Sb-Te phase change material, a preparation method thereof and a phase change memory unit. The Ta-Ge-Sb-Te phase change material comprises a tantalum (Ta) element, a germanium (Ge) element, an antimony (Sb) element and a tellurium (Te) element, the chemical formula of the Ta-Ge-Sb-Te phase change material is TaxGeySbzTe<100-x-y-z>, x is greater than or equal to 2 andless than or equal to 15, y is greater than or equal to 5 and less than or equal to 50, and z is greater than or equal to 5 and less than or equal to 70. According to the Ta-Ge-Sb-Te phase change material provided by the invention, storage materials with different crystallization temperatures, resistivity and crystallization activation energy can be obtained by adjusting the contents of the tantalum (Ta) element, the germanium (Ge) element, the antimony (Sb) element and the tellurium (Te) element and the thickness of a thin film. Compared with the traditional Ge2Sb2Te5, the Ta-Ge-Sb-Te phase change material provided by the invention has the advantages of higher thermal stability, stronger data retention force and higher crystallization speed.

Description

technical field [0001] The present application relates to the technical field of microelectronics, in particular to a Ta-Ge-Sb-Te phase-change material, a preparation method thereof, and a phase-change memory unit. Background technique [0002] Phase-change memory is a non-volatile semiconductor memory that has developed rapidly in recent years. The application of phase change memory is based on the reversible conversion between high and low resistance of the phase change material under the operation of electric pulse signal to realize the storage of "0" and "1". That is, the phase change material exhibits a high resistance value in the amorphous state, and a low resistance value in the crystalline state. Compared with traditional memory, it has the advantages of non-volatility, small component size, fast read and write speed, low power consumption, long cycle life and excellent radiation resistance, and has a mature material system and rich technology accumulation. Theref...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/14C23C14/35
CPCC23C14/352C23C14/14H10N70/8828H10N70/023
Inventor 薛媛宋三年宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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