Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method

A technology of vanadium dioxide and phase change characteristics, applied in the field of terahertz wave application, can solve the problems of low switching efficiency and speed, and achieve the effect of fast phase change, high efficiency and fast speed

Inactive Publication Date: 2011-06-01
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current metamaterial THz dynamic functional devices generally suffer from low switching efficiency and low speed.

Method used

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  • Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method
  • Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method
  • Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method

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Embodiment 1

[0019] The object of the present invention is achieved by the following technical solutions: a terahertz wave modulation device and method based on the phase change characteristics of a vanadium dioxide thin film. The modulation device is composed of a three-layer structure of a substrate, a vanadium dioxide thin film and a surface metal metamaterial. Among them, the vanadium dioxide film is uniformly grown on the surface of a silicon substrate with a thickness of 0.8 mm by a sol-gel method, and the film thickness is controlled at about 80 nm, and then the vanadium dioxide film is etched on the surface to prepare a metal metamaterial structure.

[0020] The vanadium dioxide film is excited by external heating to cause a reversible phase transition (SMT) between the monoclinic structure semiconductor phase vanadium dioxide (M) and the tetragonal structure metal phase vanadium dioxide (R). When the temperature rises above 68℃, the vanadium dioxide film changes from semiconductor ph...

Embodiment 2

[0022] The object of the present invention is achieved by the following technical solutions: a terahertz wave modulation device and method based on the phase change characteristics of a vanadium dioxide thin film. The modulation device is composed of a three-layer structure of a substrate, a vanadium dioxide thin film and a surface metal metamaterial. Among them, the vanadium dioxide film is uniformly grown on the surface of a quartz substrate with a thickness of 1 mm by a magnetron sputtering method, and the film thickness is controlled at about 600 nm, and then the vanadium dioxide film is etched on the surface to prepare a metal metamaterial structure.

[0023] An external laser with a wavelength of 600nm and a power of 400mW is used to excite the vanadium dioxide film to cause a reversible phase transition (SMT) between the monoclinic structure semiconductor phase vanadium dioxide (M) and the tetragonal structure metal phase vanadium dioxide (R) ). In the process of transiti...

Embodiment 3

[0025] The object of the present invention is achieved by the following technical solutions: a terahertz wave modulation device and method based on the phase change characteristics of a vanadium dioxide thin film. The modulation device is composed of a three-layer structure of a substrate, a vanadium dioxide thin film and a surface metal metamaterial. Among them, the vanadium dioxide film is uniformly grown on the surface of a sapphire substrate with a thickness of 2 mm by vapor deposition, and the film thickness is controlled at about 200 nm, and then the vanadium dioxide film is etched on the surface to prepare a metal metamaterial structure.

[0026] First, use an external electric field to preset the film to 35°C, and then input a 20V DC voltage signal to make the vanadium dioxide film produce monoclinic structure semiconductor phase vanadium dioxide (M) and tetragonal structure metal phase vanadium dioxide (R ) Reversible phase transition (SMT). In the process of transition...

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Abstract

The invention discloses a vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and a vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation method. The device consists of a substrate, a vanadium dioxide thin film and a surface metal metamaterial. The terahertz wave modulation device realizes the intensity modulation of terahertz waves by utilizing the characteristics of high photoelectric parameter mutation and short phase transition time in the reversible phase transition process of vanadium dioxide. In the modulation method, the vanadium dioxide thin film is excited by one or more ways of external heat excitation, bias voltage excitation and laser excitation. The terahertz wave modulation device provided by the invention is designed and manufactured by adopting the vanadium dioxide thin film as a core dynamic functional material so as to solve the problems of low modulation efficiency and low modulation speed of the conventional terahertz wave dynamic modulation device.

Description

Technical field [0001] The invention belongs to the technical field of terahertz wave applications, and particularly relates to a terahertz wave modulation device and a method based on the phase change characteristics of a vanadium dioxide film. Background technique [0002] Terahertz (Terahertz) waves refer to electromagnetic waves with a frequency in the range of 0.1~10THz (wavelength 3000~30μm). Its waveband is located between millimeter waves and infrared rays. It is the transition region from macroscopic electromagnetic theory to microscopic quantum theory. Academic and applied research value. In recent years, with the development of THz radiation source and detection technology, the application of THz technology in the fields of physics, materials science, biomedicine, astronomy and national defense has been greatly developed. [0003] The instantaneous bandwidth of the THz wave is very wide (0.1~10THz), and it can be used for communication to obtain a wireless transmission ...

Claims

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Application Information

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IPC IPC(8): G02F1/355H04B10/155H04B10/516
Inventor 黄婉霞施奇武张雅鑫张玉波毛茂颜家振
Owner SICHUAN UNIV
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