C-doped Sc-Sb-Te phase change memory material, phase change memory cell, and method for fabricating same

Abstract

The invention provides a C-doped Sc-Sb-Te phase change memory material, a phase change memory cell, and a method for fabricating the same. The Sc-Sb-Te phase change memory material is a Sc-Sb-Te phasechange memory material. In the doped Sc-Sb-Te phase change memory material, the atomic percentage of C is 1% to 40%. The Sc-Sb-Te3 is doped with C, and since C is a low-thermal-conductivity material,thermal diffusion can be well avoided. Further, the good conductivity of C ensures good conduction of the material. Under the effect of external energy, the C-doped Sc-Sb-Te3 phase change memory material can reversibly switch between a high-resistance state and a low-resistance state, and a resistance ratio of the high-resistance state to the low-resistance state can reach two orders of magnitude. When used as the storage medium of a phase change memory, the phase change memory cell not only has the advantages of fast phase change speed and low write operation current, but also is greatly improved in the high-temperature data retention and the reliability. The phase change memory using the phase change memory cell structure of the invention has superiorities of high speed, low power consumption, and good data retention.

Description

technical field [0001] The invention relates to the technical field of phase-change memory, in particular to a C-doped Sc-Sb-Te phase-change memory material, a phase-change memory unit and a preparation method thereof. Background technique [0002] With the popularity of computers and the advent of the era of big data, memory occupies an important position in the semiconductor market. Memory needs to develop towards higher integration and higher speed. The huge gap between the previous speeds of memory and hard disks has limited the development of current computers to super fast speeds. In order to deal with the bottleneck of memory development, various new memory materials have emerged. Phase-change memory (PCRAM) is a very promising new type of non-volatile memory material. By applying electric pulses of different pulse widths and intensities to chalcogenide semiconductor compounds, it can achieve a reversible phase between crystalline and amorphous states. Data storage...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a C-doped Sc-Sb-Te phase-change memory material, a phase-change memory cell and a preparation method thereof, for solving the problem of existing Sc-Sb 2 Te 3 The crystallization temperature of the face-centered cubic phase in phase-change memory materials is not high, and Sc is easily oxidized, resulting in slow phase change rate and high power consumption.

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