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Si/Sb80Te20 nanometer compound multi-layer phase change film and method for preparing same

A sb80te20, nanocomposite technology, applied in the field of materials in the field of microelectronics technology, can solve the problems of long crystallization process time, low phase transition speed, low melting point, etc. big effect

Inactive Publication Date: 2010-05-26
TONGJI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the phase change material widely used in PCRAM is Ge 2 Sb 2 Te 5 Thin film, the main reason is that this phase change material has been successfully applied in phase change optical discs, and the preparation process is mature, but Ge 2 Sb 2 Te 5 As a PCRAM storage material, thin film has exposed some shortcomings: First, the higher melting point (620 ° C) makes it require a higher RESET current (write current) during the transition process (RESET process) from the crystalline state to the amorphous state , therefore, it is necessary to develop phase change materials with lower melting point and higher crystallization temperature; secondly, Ge 2 Sb 2 Te 5 The phase transition of the thin film is a two-step crystallization process, that is, it first changes from an amorphous state to a metastable face-centered cubic structure (fcc), and then continues to change from fcc to a stable hexagonal close-packed structure (hex). The crystallization process requires The longer time makes the phase change speed lower. The programming speed of PCRAM devices depends on the phase change speed of phase change materials. Therefore, how to increase the phase change speed of phase change materials is also a problem currently facing
[0004] with traditional Ge 2 Sb 2 Te 5 Compared with Sb-Te phase change materials, which have higher crystallization speed and lower melting point, Sb-rich Sb 80 Te 20 The phase change material has a faster phase change rate, which is mainly due to the fact that its crystallization process is a crystallization process dominated by rapid grain growth, but its low crystallization temperature makes the thermal stability of the material relatively poor, At the same time, its lower crystalline resistance results in higher programming power consumption

Method used

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  • Si/Sb80Te20 nanometer compound multi-layer phase change film and method for preparing same

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Embodiment 1

[0033] Step 1 Clean SiO 2 / Si(100) substrate;

[0034] Step 2 prepares Si, Sb by room temperature magnetron sputtering 80 Te 20 Phase change film preparation:

[0035] a) Prepare Si single crystal targets and Sb with a diameter of 50.8mm and a thickness of 5mm 80 Te 20 Alloy target, the purity of Si single crystal target is 99.9999% (mass percentage), Sb 80 Te 20 The purity of the alloy target is 99.999% (mass percentage), and the background vacuum is better than 1×10 -4 Pa;

[0036] b) The radio frequency power is set at 20W;

[0037] c) Ar gas with a purity of 99.999% is used as the sputtering gas, the gas flow rate is controlled at 30 SCCM, and the sputtering pressure is 0.2 Pa. Step 3 prepares [Si(1nm) / Sb by magnetron alternate sputtering method 80 Te 20 (5nm)] 17 Nanocomposite multilayer phase change film:

[0038] a) Rotate the substrate to Sb 80 Te 20 target, open Sb 80 Te 20 RF power on the target, start sputtering Sb 80 Te 20 Thin film, the sputteri...

Embodiment 2

[0042] Step 1, step 2 are identical with embodiment 1;

[0043] Step 3: Prepare [Si(3nm) / Sb 80 Te 20 (5nm)] 12 Nanocomposite multilayer phase change film:

[0044] a) Rotate the substrate to Sb 80 Te 20 target, open Sb 80 Te 20 RF power on the target, start sputtering Sb 80 Te 20 Thin film, the sputtering time is 16s;

[0045] b) Sb 80 Te 20 After film sputtering is complete, turn off the Sb 80 Te 20 The RF power applied on the target, the substrate is rotated to the Si target position, the RF power on the Si target is turned on, and the Si film is sputtered, and the sputtering time is 72s;

[0046] c) Repeat a) and b) two steps, that is, in SiO 2 / Si(100) substrate prepared thin film structure as [Si(3nm) / Sb 80 Te 20 (5nm)] 12 The nanocomposite multilayer phase change film, the total thickness of the film is controlled at 100nm.

Embodiment 3

[0048] Step 1, step 2 are identical with embodiment 1;

[0049] Step 3: Prepare [Si(5nm) / Sb 80 Te 20 (5nm)] 10 Nanocomposite multilayer phase change film:

[0050] a) Rotate the substrate to Sb 80 Te 20 target, open Sb 80 Te 20 RF power on the target, start sputtering Sb 80 Te 20 Thin film, the sputtering time is 16s;

[0051] b) Sb 80 Te 20 After film sputtering is complete, turn off the Sb 80 Te 20 The RF power applied on the target, the substrate is rotated to the Si target position, the RF power on the Si target is turned on, and the Si film is sputtered, and the sputtering time is 120s;

[0052] c) Repeat a) and b) two steps, that is, in SiO 2 / Si(100) substrate prepared thin film structure as [Si(5nm) / Sb 80 Te 20 (5nm)] 10 The nanocomposite multilayer phase change film, the total thickness of the film is controlled at 100nm.

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Abstract

The invention relates to a Si / Sb80Te20 nanometer compound multi-layer phase change film and a method for preparing the same. The phase change film is prepared by alternately arranging and compounding Si films and Sb80Te20 films in nanometer scale, wherein the Si films separates all layers of the Sb80Te20 films to form a multi-layer film structure. The phase change film has the advantages that: (1) the crystallization temperature of the phase change film rises with the increase of the thickness of the Si film, and when the thickness of the Si film is over 5nm, the crystallization temperature of the phase change film is basically constant; (2) the separation action of the Si films on the Sb80Te20 films improves the thermal stability of the phase change film, and the temperature area where the phase change film is crystallized is very narrow, which shows that the phase change speed is very high; and (3) the crystalline state resistance of the phase change film increases with the increase of the thickness of the Si film, which facilitates the reduction of the operational power consumption in a programming process of a PCRAM device.

Description

technical field [0001] The present invention relates to a kind of material of microelectronic technology field, more specifically, the present invention relates to a kind of Si / Sb used for phase change memory 80 Te 20 Nanocomposite multilayer phase change film and its preparation method. Background technique [0002] Phase change memory (PCRAM) is currently the most promising next-generation non-volatile memory. The basic principle is to use the current pulse to generate heat to make the phase change material quickly and reversibly switch between the crystalline state (low resistance) and the amorphous state (high resistance) to realize the writing and erasing of information, and by measuring the size of the resistance to Identify the state of the datastore. As a carrier for storing information, the performance of phase change materials is the most critical factor in PCRAM technology. The development and development of phase change materials has always been the main cont...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 翟继卫汪昌州
Owner TONGJI UNIV
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