Class superlattice tin-selenium/antimony nanometer phase transition film, and preparation and application thereof

A technology similar to superlattice tin and superlattice, applied in the field of microelectronic materials, can solve the problems that affect the reliability and cycle life of PCRAM devices, phase change materials are not suitable for PCRAM devices, and poor contact between phase change layers and devices, etc. The effect of high reliability, fast phase change speed and low programming power consumption

Inactive Publication Date: 2016-07-13
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The amorphous state of Se-rich phase change material has higher resistance (about 10 13 Ω), after being fabricated into a PCRAM device, under the action of a voltage pulse, the higher RESET state resistance makes it difficult to realize the SET operation; the ratio between the amorphous state and the crystalline state resistance is large (about 10 7 ), the large resistance difference is due to the large change in the atomic structure, and the large structural change will cause a large density and volume change, resulting in poor contact between the phase change layer and the upper and lower electrodes of the device, which greatly affects the reliability of the PCRAM device sex and cycle life
It is precisely because of the above-mentioned many shortcomings that the pure SnSe 2 Phase change materials are not suitable for PCRAM devices

Method used

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  • Class superlattice tin-selenium/antimony nanometer phase transition film, and preparation and application thereof
  • Class superlattice tin-selenium/antimony nanometer phase transition film, and preparation and application thereof
  • Class superlattice tin-selenium/antimony nanometer phase transition film, and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A superlattice-like tin-selenium / antimony nano phase change film, the phase change film comprising SnSe 2 Material and elemental Sb material, the two films form a superlattice-like structure through multi-layer nanocomposite, and the general structure of the phase change film is [SnSe 2 (10nm) / Sb(2nm)) 4 , Where the SnSe in each phase change film 2 The thickness of the material is 10 nm, the thickness of the elemental Sb material in each phase change film is 2 nm, and the number of periods of the phase change film is 4 layers.

[0037] The preparation method of the phase change film mainly includes the following steps:

[0038] 1. Cleaning SiO 2 / Si(100) substrate surface and back, to remove dust particles, organic and inorganic impurities:

[0039] (a) Place the substrate in an ethanol solution and clean it with ultrasonic for 20 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0040] (b) Put the substrate in an acetone solution and c...

Embodiment 2

[0054] Using the same preparation method as in Example 1, the difference is:

[0055] Rotate the substrate to the Sb target position (target position 1), turn on the DC sputtering power supply, and sputter 2.143s to form a 3nm Sb film;

[0056] Therefore, the general formula of the final phase change film is [SnSe 2 (10nm) / Sb(3nm)) 4 .

Embodiment 3

[0073] A superlattice-like tin-selenium / antimony nano phase change film, the phase change film comprising SnSe 2 Material and elemental Sb material, the two films form a superlattice-like structure through multi-layer nanocomposite. The general structure of the phase change film is [SnSe 2 (8nm) / Sb(1.5nm)) 5 , Where the SnSe in each phase change film 2 The thickness of the material is 8 nm, the thickness of the elemental Sb material in each phase change film is 1.5 nm, and the period of the phase change film is 5, so the total thickness of the phase change film is 47.5 nm.

[0074] The preparation method of the phase change film mainly includes the following steps:

[0075] 1. Cleaning SiO 2 / Si(100) substrate surface and back, to remove dust particles, organic and inorganic impurities:

[0076] (a) Put the substrate in an ethanol solution and clean it with ultrasonic for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0077] (b) Put the ...

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Abstract

The invention relates to a class superlattice tin-selenium/antimony nanometer phase transition film, comprising a SnSe2 material and a simple substance Sb material which are alternatively superposed to form a class superlattice structure. The structure general formula of the phase transition film is [SnSe2(a)/Sb(b)]x; the total thickness of the class superlattice phase transition film is 40-60 nm, wherein a is the thickness of the SnSe2 material in each layer of phase transition film, and is in the range of 8-12 nm; b is the thickness of the simple substance Sb material in each layer of phase transition film, and is in the range of 1.5-3 nm; x is the periodicity of the class superlattice phase transition film structure, and is 4 or 5. The phase transition film is obtained through a magnetron sputtering mode, and is applied to a PCRAM device. Compared with the prior art, the phase transition film has the advantages of great heat stability, fast phase transition speed, small volume change, low power consumption and excellent comprehensive performance.

Description

Technical field [0001] The invention relates to the technical field of microelectronic materials, in particular to a superlattice-like tin-selenium / antimony nano-phase change film and its preparation and application. Background technique [0002] In the 1960s, American scientist Stanford Ovshinsky discovered that chalcogenides (Chalcogenides) materials can achieve reversible transitions of high and low resistance values ​​under electric field excitation, and show reversible changes in reflectivity under laser induction (Ovshinsky, Stanford: PhysicalReview Letters, 1968, 21 (20), p.1450). The reversible transformation based on the reflectance of phase change materials has been widely used in the field of optical storage, such as CD-ROM, DVD-ROM and Blue-ray Disc. However, the application of the reversible transformation based on the resistivity of phase change materials in the field of electrical storage has been slow, mainly due to the researchers' understanding of the phase cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/8825H10N70/026
Inventor 翟继卫吴卫华何子芳陈施谕
Owner TONGJI UNIV
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