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GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method

A nano-composite and thin-film technology, applied in the field of materials in the field of microelectronics technology, can solve problems such as large RESET current, low crystalline resistivity, and affecting the storage speed of phase-change memory, and achieve the effect of ensuring reliability

Inactive Publication Date: 2009-09-23
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Binary phase change material Sb 2 Te 3 It has a high crystallization speed, which can meet the high-speed storage requirements of phase change memory, but its low crystallization temperature is not good for the stability of data in phase change memory. At the same time, the crystal resistivity of this material is low, so it needs Larger RESET current; GeTe, as another type of phase change material, has a high crystallization temperature and a high melting point, which can meet the thermal stability requirements of phase change memory, but its crystallization speed is slow, which affects phase change memory storage speed

Method used

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  • GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method
  • GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method
  • GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method

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Effect test

Embodiment 1

[0024] Step 1 Clean SiO 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0025] a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0026] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Blow dry the watch and back;

[0027] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0028] Step 2 Prepare GeTe and Sb by room temperature magnetron sputtering 2 Te 3 Phase change film preparation:

[0029] a) Prepare GeTe and Sb with a diameter of 50.8mm and a thickness of 5mm 2 Te 3 Alloy target, the purity of the alloy target is 99.999% (atomic percentage), the background vacuum reaches 1×10 -4 Pa;

[0030] b) The radio frequency power is set at 20W;

[0031] c) Ar gas with a purity of 99.999% is used as the sputtering gas, the gas flow rate is controlled at 30 SCCM, and the sputtering pressure is 0.2 ...

Embodiment 2

[0037] Step 1, step 2 are identical with embodiment 1;

[0038] Step 3: Prepare GeTe / Sb by room temperature magnetron alternate sputtering method 2 Te 3 Nanocomposite multilayer phase change film:

[0039] a) Rotate the substrate to Sb 2 Te 3 target, open Sb 2 Te 3 RF power on the target, start sputtering Sb 2 Te 3 thin film, the sputtering time is 2s;

[0040] b) Sb 2 Te 3 After film sputtering is complete, turn off the Sb 2 Te 3 The RF power applied on the target, the substrate is rotated to the GeTe target position, the RF power on the GeTe target is turned on, and the GeTe thin film is sputtered, and the sputtering time is 6s;

[0041] c) Repeat a) and b) two steps, that is, in SiO 2 / Si(100) substrate prepared film structure as [GeTe(3nm) / Sb2Te3(1nm)] 50 The nanocomposite multilayer phase change film, the total thickness of the film is controlled at 200nm.

Embodiment 3

[0043] Step 1, step 2 are identical with embodiment 1;

[0044] Step 3: Prepare GeTe / Sb by room temperature magnetron alternate sputtering method 2 Te 3 Nanocomposite multilayer phase change film:

[0045] a) Rotate the substrate to Sb 2 Te 3 target, open Sb 2 Te 3 RF power on the target, start sputtering Sb 2 Te 3 thin film, the sputtering time is 2s;

[0046] b) Sb 2 Te 3 After film sputtering is complete, turn off the Sb 2 Te 3 The RF power applied on the target, the substrate is rotated to the GeTe target position, the RF power on the GeTe target is turned on, and the GeTe thin film is sputtered, and the sputtering time is 8s;

[0047] c) Repeat a) and b) two steps, that is, in SiO 2 / Si(100) substrate prepared film structure as [GeTe(4nm) / Sb2Te3(1nm)] 40 The nanocomposite multilayer phase change film, the total thickness of the film is controlled at 200nm.

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Abstract

The invention relates to a GeTe / Sb2Te3 multilayer nanocomposite phase transition film, the GeTe film and the Sb2Te3 film of the GeTe / Sb2Te3 multilayer nanocomposite phase transition film are arranged alternately. The GeTe / Sb2Te3 multilayer nanocomposite phase transition film of the invention enjoys high phase change rate and high thermal stability; the invention can effectively enhance the on and off ratio of a phase change memory, thus ensuring the reliability of the data readout better.

Description

technical field [0001] The present invention relates to a kind of material in the technical field of microelectronics, more specifically, the present invention relates to a kind of GeTe / Sb used for phase change memory 2 Te 3 Nanocomposite multilayer phase change film and its preparation method. Background technique [0002] The basic principle of phase-change memory is to use phase-change materials as storage media. Phase-change materials can reversibly change between amorphous and crystalline states under the action of light, electricity and other forms of energy. Phase-change memory uses phase-change materials in non-crystalline The difference between the high and low resistivity in the crystalline state and the crystalline state realizes the storage of data "0" and "1". The basic working process of phase change memory includes SET process and RESET process. Apply a wide and weak electric pulse to heat the phase change material, so that the temperature of the phase chan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00B32B9/00
Inventor 翟继卫汪昌州尚飞
Owner TONGJI UNIV
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