Phase change film material of silicon-adulterated sulfur series for phase change memory

A technology of phase-change memory and chalcogenide, which is applied in the field of materials in the field of microelectronics technology, can solve the problems of affecting the contact between phase-change thin films and electrodes or other film layers, affecting the stability of devices, and unfavorable device operation, so as to reduce write The effect of operating current, improving life, and good energy transmission
CN100511749CInactive Publication Date: 2009-07-08SHANGHAI JIAOTONG UNIV +1
2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI JIAOTONG UNIV
Publication Date
2009-07-08
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention is concerned with a kind of phase change film material with chalcogenide in silicon series for phase change storage, belonging to micro-electronics technology field. Si element takes place of Ge element of TeaGebSb100-(a+b) alloy to form TeaGeb-cSicSb100-(a+b) alloy film, and a is from 48 to 60, b is from 8 to 40, the replace scalar c of Si is from 1 to 40 atom percent. This invention has higher crystal resistance than common Ge2Sb2Te5 phase change film, and more higher amorphous / crystalline state change ratio of resistance and more lower amorphous / crystalline state film thickness change ratio and lower melting point. This kind of storage has more higher open / close ratio and stability of piece to reduce writing current of storage and get storage multi-value with higher density.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] The present invention is based on the patent application number: 200510028671.X, the patent application name is: "silicon-containing series chalcogenide phase change thin film material for phase change memory", the patent applicant is: Shanghai Jiaotong University, silicon storage technology company, The patent application date is: a patent divisional application on August 11, 2005. technical field

[0002] The invention relates to a material in the technical field of microelectronics, in particular to a silicon-containing series chalcogenide phase-change thin film material used for a phase-change memory. Background technique

[0003] The basic principle of phase change memory technology is to use phase change thin film material as storage medium. The resistivity of phase change thin film is very different between amorphous state and crystalline state. Using programmed electric pulse can make phase change thin film in amorphous state The reversible conversion between ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More