107results about How to "Stable resistance value" patented technology

The invention discloses an electrooculogram control system for control on the basis of relative motion of an eyeball and a head, and a method for controlling a cursor by using the electrooculogram control system. The electrooculogram control system comprises a sensing device and a programmable logical control unit. The sensing device contacts the face of a human body and is used for detecting information on the relative motion of the eyeball and the head so as to respectively convert the information into respective electric-eye movement wave signal of the left eye and the right eye in the longitudinal and transverse directions. The programmable logical unit executes all operation controls and flows in a programming mode, judges and processes the operation controls and flows according to the electric-eye movement wave signal generated by the sensing device so as to control the movement of a mouse cursor and execute (rolling) functions of left, right, upper and lower keys. The method comprises the following steps of: A, setting a visual focus at a position which is different from that of the cursor; B, fixedly staring the position of a target point on a host computer by the visual focus; and C, moving the cursor to the position of the visual focus by using the relative motion of the eyeball and the head.

The invention is concerned with the phase change film material containing silicon series cluster subject, that is the silicon group subject alloy TeaSibSb100-(a+b) with the a no lesser than 48 but no more than 60, and the b no less than 8 but no more than 40. The invention has the higher crystalline state resistance and non/crystalline resistance change ratio compare to the Ge2Sb2Te5 phase change film, the lower change ratio of the non/crystalline film thickness and melting point. The memorizer including the Si series sulfur group subject phase change film is with the higher ratio sum of the switch stability and it helps the writing operation current.

In an organic PTC thermistor comprising an organic polymer matrix and conductive metal particles dispersed therein, the conductive metal particles are pretreated with an organic material which is different from the organic polymer matrix, does not covalently bond with the conductive metal particles, and is not compatible at a molecular level with the organic polymer matrix so that an organic material layer covers surfaces of conductive metal particles whereby the stability of thermistor performance is improved.

[Problem] To provide a processing apparatus and processing method for stabilizing the resistance value of metal oxide film between substrates when a metal oxide film is formed on a substrate. [Solution] A target (31a) composed of a member for absorbing oxygen and a target (31b) composed of metal are disposed inside a vacuum container (2) capable of plasma sputtering, and a substrate (S) is conveyed into the vacuum chamber (2). The substrate (S) is covered with a cover plate (43), the target (31a) is sputtered and formed into a film inside the vacuum chamber (2), and oxygen inside the vacuum chamber (2) is made to adsorb onto the film. The cover plate (43) is moved from above the substrate S, the target (31b) is sputtered, and a metal film is formed on the substrate (S). The required amount of oxygen is fed from the cover plate (43), which has again been moved over the substrate (S), and a metal film is formed into a metal oxide film. The substrate (2) on which the target (31a) has been sputtered, on which oxygen inside the vacuum container (2) has been adsorbed, and on which a metal oxide film has been formed is conveyed out from the interior of the vacuum container (2).

The disclosed materials include three types: (1) alloy firm of TeaSibSbl00-(a+b); (2) firm of (TeaGebSb l00-(a+b) )c Si1oo-c formed from Ge-Sb-Te alloy with Si being doped into; (3) alloy firm of TeaSicGe(b-c)Sb l00-(a+b) obtained by using Si to partially replace Ge in Ge-Sb-Te alloy. Comparing common Ge2Sb2Te5 film of phase change, the invention possesses higher resistance of crystalline state, higher rate of change of amorphous state / crystalline state, lower rate of change of film thickness of amorphous state / crystalline state, and lower melting point. These characters make storage devices of film of phase change containing chalcogenide in Si group possess higher rate of on/off and stability of device. The invention makes for lowering operation current for writing storage devices as well as for realizing storage in multiple values in higher density.

The invention relates to a production technology of a nanoscale conductive titanium dioxide and belongs to the technical field of titanium dioxide production. The production technology comprises the following steps: reducing oxidized graphene into graphene, mixing the graphene with titanium dioxide, and finally forming a titanium dioxide-graphene composite material; oxidizing graphite powder with concentrated sulfuric acid and potassium permanganate, and forming the oxidized graphene after centrifugal precipitation; drying and grinding the oxidized graphene into powder, respectively putting the oxidized graphene and titanium dioxide powder into absolute ethyl alcohol, dripping an absolute ethyl alcohol dispersion liquid of the oxidized graphene into the absolute ethyl alcohol dispersion liquid of the titanium dioxide, and adding hydrochloric acid and distilled water to obtain a gel product; and carrying out ageing and ultrasonic cleaning, roasting and grinding the gel product, reducing the oxidized graphene into the graphene, and combining with the titanium dioxide to form conductive titanium dioxide. The nanoscale conductive titanium dioxide is applicable to low-temperature preparation of conductive and antistatic equipment, is also applicable to preparation of a variable-temperature sintered powder material of which the high temperature can reach 1600 DEG C and is applicable to popularization and application in related fields.

A semiconductor device having a metal thin-film resistance on an insulation film includes first and second contact holes formed in the insulation film, a first conductive plug formed in the first contact hole, a second conductive plug formed in the second contact hole simultaneously to formation of the first conductive plug, a metal thin-film resistance formed on the first conductive plug and on the insulation film, and a metal interconnection pattern formed on the second conductive plug and the insulation film.

The present application discloses an NTC chip electrode paste and a method for preparing an NTC chip using the same. The NTC chip electrode paste of the present application comprises silver-coated palladium powder used as a conductive agent instead of silver powder. The silver-coated palladium powder of the present application is a silver-added binary alloy with palladium as a matrix, and palladium and silver can be infinitely mutually soluble to form a continuous solid solution with a stable resistance value and good oxidation resistance at room temperature. The oxidation resistance of the solid solution increases with a palladium content increase at a high temperature. The solid solution does not change in color in a sulfur-containing atmosphere, and is not liable to corrosion aging. TheNTC chip prepared by using the electrode paste of the present application has stable resistance, high reliability, good resistance to mechanical vibration and cold and heat shock resistance, can meetthe requirements for high precision, fast response, good consistency and high reliability of a temperature sensors in battery packs, motors, electric control and thermal management systems of new energy vehicles.

The invention provides an addition-curable rubber composition suitable for manufacturing a rubber for a roll that is free of the tackiness of the rubber surface and oil bleeding and used for electrophotographic image forming apparatuses and the like. The addition-curable rubber composition for the roll contains (A) a polyoxyalkylene having at least two alkenyl groups in the molecule, (B) an organopolysiloxane having at least two alkenyl groups and containing 10-50 mol% of phenyl groups bonded to silicon atoms based on the total organic groups bonded to the silicon atoms, (C) an organohydrogenpolysiloxane having in the molecule at least two hydrogen atoms bonded to silicon atoms, (D) a platinum catalyst, and (E) an ion conductivity imparting agent.

The invention provides a top cover assembly of a secondary battery, and the secondary battery. The top cover assembly of the secondary battery comprises: a top cover plate, which comprises a cover sheet that is provided with a first electrode leading-out hole; and a first pole assembly, which comprises a first pole and a conductive sealing ring, wherein the first pole is configured to pass throughthe first electrode leading-out hole, the conductive sealing ring surrounds the first pole, seals the first electrode leading-out hole and is in a compressed state, the first pole is electrically connected with the cover sheet through the conductive sealing ring, and the resistance of the conductive sealing ring is greater than the resistance of the first pole. According to the invention, the first pole and the cover sheet of the secondary battery can be electrically connected, and the resistance of a resistor arranged between and connected with the first pole and the cover sheet is always maintained stable, so the problem that instable resistance between the first pole and the cover sheet easily causes potential safety hazards like fires can be avoided.

The invention discloses a structure of semiconductor device. The structure of the semiconductor device comprises a medal mounted on a lower layer, an anti-reflection layer and a medal insulator formed in sequence on the upper surface of the medal mounted on the lower layer. Medal as a lower electrode is deposited in a through-hole of the medal insulator and a medal oxide layer is formed on the upper end of the lower electrode. A barrier layer made of medals is arranged among the lower electrode, the medal oxide layer, and the side wall of the through-hole. The structure of the semiconductor device is characterized in that a medal aluminum layer deposited on the upper end of the medal insulator and the upper end of the medal oxide layer is further included, the medal aluminum layer is an upper electrode, and medal-insulator-medal is finally formed by the lower electrode, the medal oxide layer, and the medal aluminum layer. The invention further discloses a manufacturing method of semiconductor. Initial resistance can be significantly improved, and the structure and manufacturing method of the semiconductor device has good characteristics of variable resistance.

The invention provides an aluminum-carbon composite material used for a tension-resisting joint fitting and a preparing method of the aluminum-carbon composite material. Aluminum powder and carbon powder dispersed in an organic solvent are evenly mixed, dried, subjected to ball grinding and pressed into an aluminum-carbon powder block; and the above aluminum-carbon powder block and an aluminum block are used as raw materials to be subjected to smelting, ingot casting, cogging and rolling, and a joint fitting material high in strength and resistant to loosening is obtained. The electric conductivity of the joint fitting prepared through the aluminum-carbon composite material is equivalent to that of pure aluminum. Due to the adding of carbon particles, the hardness, strength and high-temperature loosening resisting performance of the joint fitting are greatly improved. Due to the fact that carbon has very good stability in the atmosphere and does not form an alloy or a compound with aluminum, the corrosion resistance of aluminum is not obviously changed. Preparing steps are simple, operation is convenient, and practicability is high.

The invention provides an intelligent grouting bush and a saturation and damage position detection device and method thereof. The intelligent grouting bush comprises a bush body, sealing rings arranged at openings in the two ends of the bush body and at least three conducting sheets arranged in the inner cavity of the bush body, wherein two conducting sheets are located at the two ends of the inner cavity of the bush body respectively, and the other conducting sheets are arranged at intervals in the axis direction of the bush body. According to the invention, the conducting sheets are connected in series with the power supply and the universal meter to form the detection device, so that the resistance of the grouting material can be detected by using the formed conductive loop after the conductive grouting material is injected, and the saturation and unsaturated positions of the grouting material can be detected according to the resistance values of different positions; in the long-term service process of the anchoring body in the grouting bush, the resistance of the anchoring body at different positions is detected, and the damage position of the anchoring body can be effectively judged; and the detection device provided by the invention is simple in structure, the detection method is simple, convenient and feasible, and the application value is relatively high.

The invention belongs to the field of alloy wire manufacturing, and particularly discloses a silver-copper alloy wire for a patch fuse wire and a manufacturing method of the silver-copper alloy wire.The silver-copper alloy wire comprises elements of silver, indium, cerium, cobalt, palladium and copper; and the alloy wire with the elements has the advantages of being low in cost, stable in resistance value, high in tensile strength, small in change of resistance value along the temperature and the like. The manufacturing method comprises the following steps that firstly, the copper, the silver, the indium, the cerium and the cobalt are prepared according to the ratio, and smelting and processing are carried out to obtain a silver-copper alloy rod; then large-deformation processing is carried out on the prepared silver-copper alloy rod so as to prepare a silver-copper alloy crude wire; and finally, wire drawing is carried out on the prepared silver-copper alloy crude wire to prepare a finished product of the silver-copper alloy wire. According to the silver-copper alloy wire and the manufacturing method, the stability of the alloy component is ensured, and the defects of segregation, looseness, air holes and the like generated in the traditional pouring mode are avoided. The large-deformation processing enables grains in the alloy to be elongated, crushed and refined, so that the alloy components are uniformly dispersed, the resistance value of the patch fuse wire silver-copper alloy is more stable, and meanwhile, the strength is further improved.

In an ink jet head circuit board including a heater for generating thermal energy used for ejecting ink in response to application of electricity, a drop in thermal energy efficiency is prevented while reducing an area of the heater to achieve higher-resolution and higher-image-quality printing, and damages on the heater attributable to a manufacturing process are avoided. To achieve this, a resistor layer is disposed on an electrode wire layer; and two protective layers are disposed thereon. Then the upper protective layer is removed in a site above the heater. Accordingly, it is possible to dispose the protective layers without causing a decrease in an effective bubble generating region, and to improve thermal energy efficiency by reducing the effective thickness of the protective layer above the heater. Moreover, the resistor layer is covered with the first protective layer and is thereby prevented from adverse effects in the manufacturing process such as etching processes.