Vacuum-processing apparatus, vacuum-processing method, and storage medium

Abstract

[Problem] To provide a processing apparatus and processing method for stabilizing the resistance value of metal oxide film between substrates when a metal oxide film is formed on a substrate. [Solution] A target (31a) composed of a member for absorbing oxygen and a target (31b) composed of metal are disposed inside a vacuum container (2) capable of plasma sputtering, and a substrate (S) is conveyed into the vacuum chamber (2). The substrate (S) is covered with a cover plate (43), the target (31a) is sputtered and formed into a film inside the vacuum chamber (2), and oxygen inside the vacuum chamber (2) is made to adsorb onto the film. The cover plate (43) is moved from above the substrate S, the target (31b) is sputtered, and a metal film is formed on the substrate (S). The required amount of oxygen is fed from the cover plate (43), which has again been moved over the substrate (S), and a metal film is formed into a metal oxide film. The substrate (2) on which the target (31a) has been sputtered, on which oxygen inside the vacuum container (2) has been adsorbed, and on which a metal oxide film has been formed is conveyed out from the interior of the vacuum container (2).

Description

technical field [0001] The present invention relates to a vacuum processing device and a vacuum processing method for forming a metal film on a substrate by sputtering a target made of metal, and then oxidizing the metal film to obtain a metal oxide film. Background technique [0002] Recently, MRAM (Magnetoresistive Random Access Memory) has attracted attention as one of memories expected to have superior characteristics compared to conventional memories such as DRAM. The basic mechanism of MRAM storage elements is in Figure 12 shown in . The MRAM memory element has ferromagnetic layers 92a and 92b on both sides with an insulating film 91 interposed therebetween, the magnetization direction of the ferromagnetic layer 92a is variable, and the magnetization direction of the ferromagnetic layer 92b is fixed. Such as Figure 12 As shown in (a), when the magnetization directions of the ferromagnetic layers 92a and 92b on both sides are opposite, the resistance value of the ins...

AI Technical Summary

Problems solved by technology

[0004] As a film-forming process of the metal oxide film, a method of sputtering a target made of a metal oxide (reactive sputtering method) is described in Japanese Patent Application Laid-Open No. 6-172989. problems such as slow oxidation in

In addition, Japanese Patent Application Laid-Open No. 2008-13829 describes a method of forming a metal oxide film on a substrate by sputtering a target made of metal while introducing oxygen into a sputtering apparatus. As a result, the surface of the target is oxidized, causing the resistance value of the formed metal oxide film to be unstable.

In addition, Japanese Patent Application Laid-Open No. 6-49633 describes a method of forming a metal film in one processing chamber and supplying oxygen in another oxygen supply chamber to oxidize the metal film. However, two or more chambers are used, so The overall productivity of the device decreases

Furthermore, oxygen introduced into the oxygen supply chamber may remain, and the resistance value of the metal oxide film may vary between substrates due to the residual oxygen.

[0005] The metal oxide film formed by the methods described in the above three publications lacks stability in the resistance value between the substrates, so there is a problem that a high yield cannot be obtained.

[0006] In addition, Japanese Patent Application Laid-Open No. 2009-65181 describes an MRAM manufacturing method that uses a processing chamber having two targets to perform gettering (Japanese: guttering) before forming a metal oxide film. However, The material itself of the metal oxide film (MgO in this invention) is directly used as the target, so it is not the motivation of the present invention

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