Dispersion for preventing electrification and antistatic film, and image display device

A technology for an image display device and an anti-charge film, which is applied to image/graphic display tubes, identification devices, circuits, etc., can solve the problems of small film thickness dependence, inability to use the anti-charge film, lack of reliability, etc., and achieve good display. Effects of Features

Inactive Publication Date: 2003-11-05
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, when using the dipping method or the spin coating method, the film thickness must be strictly controlled, and there is a problem that it takes time to manage the film thickness or the production cost increases.
[0007] In addition, the ion-conductive membranes used in the past have a small dependence on the film thickness of the resistance value, but due to the large dependence on the environment such as temperature and humidity, they lack reliability, and they cannot be used as vacuum tubes, etc. anti-static film

Method used

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  • Dispersion for preventing electrification and antistatic film, and image display device
  • Dispersion for preventing electrification and antistatic film, and image display device
  • Dispersion for preventing electrification and antistatic film, and image display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] First, antistatic dispersion A (hereinafter referred to as dispersion A) having the following composition was prepared

[0066] Antimony pentoxide (pyrochlore crystal form) (particle size 20nm)……1.0%

[0067] Ethanol ……99.0%

[0068] The dispersion A is applied to the inner wall surface of the tube neck (outer diameter 22.5 mm) of a 15-inch color cathode ray tube with brush hairs along the length of about 15 mm in the tube axis direction, and then heated at a temperature of about 450 ° C and heated by After firing, an antistatic film with a film thickness of 300 nm was formed.

[0069] Also, as Comparative Example 1, the antistatic dispersion B (hereinafter referred to as dispersion B) was prepared with the following composition, and the antistatic film (thickness: 100 nm) was prepared in the same manner as in Example 1 using this dispersion B. Formed on the inner wall surface of the neck of the color cathode ray tube.

[0070] ATO (particle size 10nm) ... 1.0%

[0...

Embodiment 2

[0073] By means of sol-gel method, SiO 2 The thus-constituted coating layer (thickness: 1 nm) was formed on the surface of the ATO microparticles with a particle diameter of 50 nm to produce composite microparticles C (hereinafter, referred to as microparticles C). The fixed resistance of the small C obtained by measuring the particles is 10 8 Ω·cm.

[0074] Hereinafter, after preparing the antistatic dispersion D (hereinafter referred to as dispersion D) with the following composition using the microparticles C, the antistatic film (thickness: 150 nm) was formed in the same manner as in Example 1 using the dispersion. Formed on the inner wall surface of the neck of the color cathode ray tube.

[0075] Microparticle C ... 1.0%

[0076] Ethanol ……99.0%

[0077] Next, for the color cathode ray tubes having the antistatic coatings obtained in Examples 1, 2 and Comparative Example 1, the convergence drift characteristics (variation), the presence or absence of sparks in the tu...

Embodiment 3

[0081] The dispersion A prepared in Example 1 was applied to the entire surface of the spacer member made of low-alkali glass for FED by brush coating, and then heated at a temperature of about 450°C to form a film thickness 500nm antistatic film.

[0082] Then, using this spacer, an FED is assembled by a known method. That is, the rear plate provided with the plurality of electric field emission type electron sources and the phosphor screen arranged in a predetermined pattern to form the phosphor layer are arranged facing each other through the spacer having the above-mentioned antistatic film, and the side plate etc. are bonded at the peripheral portion. By means of packaging, to make FED.

[0083] Also, as Comparative Example 2, using the above-described dispersion liquid B, an antistatic film was formed on the surface of the spacer member in the same manner as in Example 3, and an FED was produced using this film.

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Abstract

The antistatic dispersion liquid contains high-resistance fine particles having an intrinsic resistance value of 106-109 Ω·cm as a main component. This dispersion is applied by a simple method such as spraying or brushing, and then fired. An antistatic film having a stable antistatic property can be obtained with little dependence on the film thickness and the environment of the resistance value. As the high-resistance fine particles, there is a core layer of at least one semiconductive material selected from antimony pentoxide Sb2O5 having a pyrohlore crystal structure, or SnO2, In2O3, Sb2O5, and ZnO2, and a core layer having a semiconducting material selected from SiO2 , TiO2, Al2O3, ZrO2 selected at least one insulating material coating layer particles. This antistatic film does not produce display characteristics due to deformation of orbits of emitted electrons due to voltage application, sparks in the tube, or leakage currents in an image display device formed on the surface of an insulating member disposed in a vacuum envelope. degradation, stable and excellent display characteristics can be achieved.

Description

technical field [0001] The present invention relates to an antistatic dispersion liquid, an antistatic film, and an image display device such as a color cathode ray tube and a field effect emission display (FED) provided with the antistatic film. Background technique [0002] Conventionally, in a color cathode ray tube (CRT), a part of electrons emitted from an electron gun is irradiated on the inner wall of the neck, or ions ionized by the emitted electrons are attached to cause electrification. Therefore, an antistatic film is formed on the glass substrate at the inner wall of the neck in order to prevent the trajectory of the electrons emitted by charging from being bent or being prevented from reaching the front-view position on the phosphor. [0003] Conventionally, as a material used to form such an antistatic film, ITO (Indium-Tin-Oxide) or ATO (Antimony-Tin-Oxide) or ZnO 2 The inherent resistance value (resistivity) of 10 5 Microparticles of semiconductive substanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D7/61C09K3/16H01B1/08H01J29/86H01J29/87H01J31/12
CPCC08K3/22C09K3/16H01B1/08H01J29/868H01J2229/8635C09D7/61C09D7/67Y10T428/256Y10T428/259Y10T428/2995
Inventor 伊藤武夫小柳津剛三上啓田畑仁
Owner KK TOSHIBA
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