Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory

A technology of phase-change memory and chalcogenide, which is applied in the field of materials in the field of microelectronics technology, can solve the problems of affecting the contact between phase-change thin films and electrodes or other film layers, affecting the stability of devices, and unfavorable device operation, so as to reduce write The effect of operating current, improving life, and good energy transmission

Inactive Publication Date: 2006-03-08
SHANGHAI JIAO TONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this process, the thickness of the phase change film will change, if the change is too large, it will affect the contact between the phase change film and electrodes or other film layers, thus affecting the stabi

Method used

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  • Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory
  • Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory
  • Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory

Examples

Experimental program
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Effect test

Embodiment 1

[0025] The phase change material series is Si doped into Te a Ge b Sb 100-(a+b) Alloy Si-doped Ge-Sb-Te films. The ranges of parameters a and b are proposed with reference to the parameter ranges of the patents of S.R.Ovshinsky et al. on phase change memory. figure 2 Si doped Ge obtained for different Si doping amounts 2 Sb 2 Te 5 Thin films and commonly used Ge 2 Sb 2 Te 5 The relationship between film resistivity and annealing temperature. At a temperature of 160°C and below, all films are in an amorphous state, and the film resistance is in a high resistance state. As the annealing temperature increases, the film begins to crystallize, and the film resistivity begins to decrease. When the film is crystallized, the film resistance is in a low resistance state. This process is realized in the device by heating the phase-change film with electric pulses, and the reversible transition between the high-resistance state and the low-resistance state can be achieved by a...

Embodiment 2

[0031] The phase change material series is a Si-Sb-Te alloy film formed by completely replacing the Ge element in the Ge-Sb-Te alloy with Si element. Figure 4 For the Si-Sb-Te chalcogenide film of the present invention and the commonly used Ge 2 Sb 2 Te 5 The relationship between film resistivity and annealing temperature. At a temperature of 160°C and below, all films are in an amorphous state, and the film resistance is in a high resistance state. As the annealing temperature increases, the film begins to crystallize, and the film resistivity begins to decrease. When the film is crystallized, the film resistance is in a low resistance state. This process is realized in the device by heating the phase-change film with electric pulses, and the reversible transition between the high-resistance state and the low-resistance state can be achieved by applying different electric pulses. Si-Sb-Te alloy thin films compared with commonly used Ge 2 Sb 2 Te 5 thin film, its amorp...

Embodiment 3

[0039] Both Ge element and Si element are group IV elements and have the same valence in the alloy, so the element Si can partially or even completely replace the Ge element in the Ge-Sb-Te alloy. When the Si element completely replaces the Ge element, it forms an implementation Si-Sb-Te alloy thin films described in Example 2. Si elements partially replace Te a Ge b Sb 100-(a+b) The Ge element in the alloy can form Te a Ge b-c Si c Sb 100-(a+b) alloy film. With reference to the experimental results of Example 1 and Example 2, it can be seen that the partial replacement of Ge elements by Si elements can still achieve the following effects: (1) improve the amorphous / crystalline resistance change rate of the film, thereby improving the on / off of the device Compare. (2) At the same time, the crystalline resistance of the thin film is appropriately increased, so as to achieve the purpose of reducing the writing operation current. (3) Lower the melting point of the film. ...

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Abstract

The disclosed materials include three types: (1) alloy firm of TeaSibSbl00-(a+b); (2) firm of (TeaGebSb l00-(a+b) )c Si1oo-c formed from Ge-Sb-Te alloy with Si being doped into; (3) alloy firm of TeaSicGe(b-c)Sb l00-(a+b) obtained by using Si to partially replace Ge in Ge-Sb-Te alloy. Comparing common Ge2Sb2Te5 film of phase change, the invention possesses higher resistance of crystalline state, higher rate of change of amorphous state / crystalline state, lower rate of change of film thickness of amorphous state / crystalline state, and lower melting point. These characters make storage devices of film of phase change containing chalcogenide in Si group possess higher rate of on/off and stability of device. The invention makes for lowering operation current for writing storage devices as well as for realizing storage in multiple values in higher density.

Description

technical field [0001] The invention relates to a material in the technical field of microelectronics, in particular to a silicon-containing series chalcogenide phase-change thin film material used for a phase-change memory. Background technique [0002] The basic principle of phase change memory technology is to use phase change thin film material as storage medium. The resistivity of phase change thin film is very different between amorphous state and crystalline state. Using programmed electric pulse can make phase change thin film in amorphous state The reversible conversion between the crystal state and the crystalline state, so that the phase change memory cell can reversibly change between high resistance and low resistance. Moreover, the state of the storage unit is non-volatile, that is, when it is set to any state, even if the power is cut off, the storage unit still maintains the resistance value of the state, unless the state of the storage unit is reset. The me...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 冯洁乔保卫赖云锋蔡炳初陈邦明
Owner SHANGHAI JIAO TONG UNIV
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